The invention discloses a
high voltage LED and a production technology thereof, and relates to the LED production technology field. DBR
layers are disposed on a surface of a semi-finished product by adopting the
evaporation technology, and then after the
etching treatment, the DBR
layers on side walls of
quantum wells and surfaces of N-GaN
layers of all cells can be kept, and the DBR layers on the
substrate surface, the side walls of the N-GaN layer, the side walls of the
quantum well, the side walls of the P-GaN layer, and the surface of the P-GaN layer, which are arranged between the second
electrode area of the
cell and the first
electrode area of another adjacent
cell can be kept. The
high voltage LED is characterized in that the DBR insulation layers can be arranged on the side walls of the
quantum wells and the surfaces of the N-GaN layers of all cells, and the DBR layers can be arranged on the
substrate surface, the side walls of the N-GaN layer, the side walls of the quantum wells, the side walls of the P-GaN layer, and the surface of the P-GaN layer, which are arranged between the second
electrode area of one
cell and the first electrode area of the adjacent cell. The light loss can be reduced, and then the brightness of the
chip can be increased, when the DBR insulation functions are adopted by the cells.