44results about How to "Reduce effective width" patented technology

A rotor for an electric machine includes a rotor core having a plurality of rotor sheets (RS1), each of the plurality of rotor sheets including a plurality of flux guide sections, each of the plurality of flux guide sections having a plurality of flux paths and a plurality of flux barriers. The plurality of flux guide sections having a first flux guide section in which a first number of the plurality of flux barriers has a bridge interrupting the flux barrier, and a second flux guide section in which a second number of the plurality of flux barriers has a bridge interrupting the flux barrier. Each bridge is made of a material of high permeance, and the first number of the first flux guide section is different than the second number of the second flux guide section.

A MEMS variable optical attenuator (VOA) chip includes a frame having a planar surface, a micro-electric actuator with a movable optical shutter arranged with respect to the planar surface of the frame, where the VOA is actuated by thermal expansion. The micro-electric actuator comprises semiconductor conductors (“wires”) that can be moved, upon applying an electrical current, by thermal expansion. In one embodiment, the MEMS VOA chip is configured in a multiple wire arrangement that restricts the shutter movement in a plane.

The invention discloses an inner truss type steel tube concrete L-shaped column and a construction method thereof. The inner truss type steel tube concrete L-shaped column comprises a wrapping steel tube, filling concrete and an inner truss; the inner truss comprises T-shaped steel, inner truss subunits and T-shaped steel web lacing bars; the inner truss subunits are formed by welding the T-shaped steel; the T-shaped steel web lacing bars are longitudinally welded in a T-shaped steel web and the inner truss subunits along the T-shaped steel in a stacked manner; the T-shaped steel and the inner truss subunits are positioned at edges and corners of a quadrangle; the cross section of the wrapping steel tube is inversely L-shaped or n-shaped; and the wrapping steel tube is fixedly welded with flange plates of the T-shaped steel. The inner truss is tensioned at a corner of a special-shaped steel tube, so that effective width of a steel plate is reduced, a fulcrum is provided for deformation of the steel plate out of a plane, anti-unsteady capability of the steel plate can be improved, a hooping effect of the column is improved, and the bearing capacity of a steel tube concrete special-shaped column is improved obviously.

The invention relates to a super junction semiconductor device manufacturing method capable of improving the avalanche capacity. On-resistance is increased correspondingly due to transverse diffusion caused by the traditional high dosage concentration of a column P, and puncture voltage is reduced due to electric charge unbalance of the column P and a column N. According to the method, the epitaxy technology is utilized to form an N-type epitaxy layer; a P-type and N-type epitaxy layer is formed by injecting boron ions; the injection amount of the boron ions increases gradually, and the boron ions are pushed under the high temperature to form a P-type and N-type alternant epitaxy layer; a Pbody area is formed by injecting the boron ions; a polycrystalline silicon gate electrode is formed by etching polycrystalline silicon through the dry method; an N+ source area is formed by injecting arsenic ions; a layer of aluminum is deposited on the upper surface of a whole device, a source metal electrode is formed by etching the aluminum, and a drain electrode is formed on the back face through metallization. According to the super junction semiconductor device obtained through the method, the avalanche capacity of the super junction semiconductor device is improved, and at the same time, on-resistance is reduced.

A mold for sequentially curing sections of a belt includes two end zones, a center zone, and transition zones between each end zone and the center zone. The mold is heated and/or cooled by heat transfer fluid flowing from intake manifolds through heat transfer cavities. The intake manifolds are preferably arranged perpendicular to the mold length. In the end zones and in the center zone, the heat transfer cavities are arranged substantially parallel to the length of the mold. The arrangement of the heat transfer cavities provides for a more controlled cure of the belt by allowing the center zone to maintain a consistent temperature throughout the center zone while allowing a cooler consistent temperature to be maintained in the end zones. The transition zones allow a steep temperature gradient from the cooler end zones to the hotter center zone. Heat transfer rates are adjustable without modification to the body of the mold.

A support structure for supporting and tilting an oversized cargo to reduce the effective width of the cargo. The structure comprises a frame having a base and a stanchion connected to the base. A rocker arm is pivotally coupled to the stanchion to pivot about a pivot axis. The arm includes a first and second end disposed opposite one another. The arm has a center of gravity disposed between the first end and the pivot axis and that biases the arm to pivot in a first pivotal direction. First and second brackets are positioned near the first and second ends of the arm for receiving the cargo. The cargo has a center of gravity disposed between the pivot axis and the second end that causes the arm to pivot in a second pivotal direction opposite the first pivotal direction.

New device structure for single-legged Silicon-On-Insulator Metal-Oxide-Semiconductor (SOI MOS) transistor is presented. This new structure imposes a hard barrier for an Impact-Ionization current and for transients due to Single-Event-Effects (SEE's) in Body to laterally conduct (or diffuse) to the Source through the Body/Source junction. It forces these currents to conduct instead to the Source through an alternate path made of highly conductive Silicide. This alternate path effectively suppresses the latch-up of the built-in parasitic Bipolar structure without necessitating the incorporation of Body-Tied-Source (BTS) implant into the device structure that increases the total device periphery without correspondingly scaling its device current.

An apparatus for the concurrent converting of multiple web products includes at least a first unwind station and a second unwind station. The apparatus further includes a first web transformation station associated with a first web material unwound from the first unwind station, and a second web transformation station associated with the second web material unwound from the second unwind station. The first and second web transformation stations are disposed such that less than twice the width of the widest web material separates a portion of the first web material in the first web transformation station from a portion of the second web material in the second web transformation station. The method of the invention includes steps of unwinding web materials from rolls at each of the first and second unwind stations and transforming the respective web materials using the first and second web transformation stations.

In order to manufacture a liquid ejection apparatus, a metal board is prepared. The metal board is subjected to a plastic working to form a plurality of recesses on a first face in a first region of the metal board. Through holes are punched so as to communicate the recesses and a second face of the metal board. The metal board is subjected to a plastic working to form a plurality of dents in a second region of the meal board. A metallic nozzle plate formed with nozzles is joined onto the second face of the metal board, such that each of the nozzles is communicated with one of the through holes.

The invention belongs to the field of the road shoulder forming project, and particularly relates to an earth road shoulder forming paver. The earth road shoulder forming paver comprises a hopper assembly, a sliding form mould and a main machine, wherein the main machine comprises a main machine base frame and a power box arranged on the main machine base frame; the hopper assembly is arranged onthe front side of the main machine, the hopper assembly comprises a hopper and a hopper base frame used for carrying the hopper, and a discharging opening is formed in the left side of the hopper; thesliding form mould is installed on the left front side of the main machine base frame, and the sliding form mould can lift and descent to adjust the height of the road shoulder forming and can laterally translate left and right to adjust the position of the road shoulder forming. The earth road shoulder forming paver is capable of completing the construction of the continuous forming of earth road shoulders on the two sides of a road, the automation degree is high, and labor coast is greatly saved.

The invention relates to an MOS (Metal Oxide Semiconductor) device for ESD (Electrostatic Discharge) protection of an integrated circuit chip, belonging to the technical field of electronics. On the premise that the size of the device is not increased and more chip area is not required to be consumed, substrate resistance between a source region and a substrate contact region is increased by adding a plurality of strip-shaped well regions which are in parallel with the transverse direction of the device in a substrate region below a position between the source region and the substrate contact region, so that the ESD resisting ability of the device is improved; besides, the size of the substrate resistance of the device can be adjusted and the problem of poor starting uniformity of the device can be solved by adjusting the quantity and the width of the strip-shaped well regions and the mutual distances among the strip-shaped well regions, so that the secondary breakdown current of the device is further improved; meanwhile, the manufacturing process of the MOS device is compatible with the standard CMOS process. In conclusion, the MOS device for the ESD protection of the integrated circuit chip provided by the invention has stronger ESD resisting ability due to the increase of the substrate resistance and the production cost of the device is not increased because the size of the device is not increased.

A charging roller has a conductive shaft, a charge emission member provided to the shaft, and a gap securing member provided to the shaft. The gap securing member (i) protrudes toward the photoreceptor drum so as to be closer to the photoreceptor drum than the charge emission member is to the photoreceptor drum and (ii) is in contact with the photoreceptor drum so as to secure a gap between the charge emission member and the photoreceptor drum. A conductive part of the gap securing member and the shaft are bonded to each other by electrically releasing adhesive, so that the gap securing member is provided to the shaft.

The invention discloses a high-threshold power semiconductor device and a manufacturing method thereof. The high-threshold power semiconductor device sequentially comprises a drain metal electrode, asubstrate, a buffer layer and a drift region from bottom to top, and also comprises: a composite column body on the drift region, formed by a drift region protrusion, a columnar p region and a columnar n region, and a channel layer, a passivation layer, a dielectric layer, a heavily doped semiconductor layer, a gate metal electrode and a source metal electrode. The composite column body is formedby sequentially depositing a p-type semiconductor layer and an n-type semiconductor layer on the drift region and then etching the p-type semiconductor layer and the n-type semiconductor layer; wherein the channel layer and the passivation layer are formed by deposition in sequence. Therefore, the device is divided into a cellular region and a terminal region. The dielectric layer, the heavily doped semiconductor layer, the gate metal electrode and the source metal electrode only exist in the cellular region, and the passivation layer of the terminal region extends upwards and wraps the outerside of the channel layer. The structure can improve the threshold voltage of the device, improve the blocking characteristic of the device, and reduce the gate capacitance.

The invention discloses a polymer lithium ion battery, characterized by comprising a battery body (5), the exterior of the battery body (5) is provided with a battery case (50), and left and right sides of the battery case (50) are respectively provided with a stepped side (2). In addition, the invention also discloses a preparation method of a polymer lithium ion battery. The invention disclosesa polymer lithium ion battery and a preparation method thereof, which can effectively encapsulate polymer lithium ion batteries, the side edge of the polymer lithium ion battery is ultra-thin, and theeffective width of the battery can be reduced; the technical scheme provides more space and possibility for the capacity improvement of the battery, and ensures the good sealing property of the polymer lithium ion battery, effectively avoids the bad resistance of the shell and the corrosion of the electrolyte to the aluminum plastic shell; the battery can be conveniently manufactured, which is beneficial to the wide application and has great significance in the production practice.