The invention belongs to the field of
semiconductor devices, and provides a non-junction dual-grid line tunneling field-effect
transistor. The non-junction dual-grid line tunneling field-effect
transistor is used for improving an on-state current of the non-junction dual-grid line tunneling field-effect
transistor. In the tunneling field-effect transistor, P-type
doping characteristic source region and an N-type
doping characteristic drain region are formed in a non-doped or light-doped channel by electrical
doping according to difference between a
work function of source region
metal and drain region
metal and
semiconductor electron affinity of a channel region, a vertical symmetric dual-grid structure of a traditional non-junction dual-grid tunneling transistor is changed, so that top-layer
metal grid and bottom-layer
metal grid are provided with an asymmetric dual-grid structure with length difference, carrier line tunneling is introduced to the non-junction dual-grid tunneling field-effect transistor, and line tunneling is taken as main; and meanwhile, by extending extension length of the top-layer
metal grid, the length difference between the top-layer
metal grid and the bottom-layer metal grid is increased by shortening the length of the bottom-layer metal grid, the line tunneling area of the transistor is expanded, the carrier tunneling probability is improved, and the on-state current of the device is effectively improved.