30results about "Nanotech thermometers" patented technology

The invention relates to the technical field of energy storage cabinet safety monitoring, in particular to an energy storage cabinet multi-parameter intelligent monitoring device based on an MEMS sensor array, a sensor array unit in the energy storage cabinet multi-parameter intelligent monitoring device comprises distributed MEMS temperature and vibration sensors, the temperature sensors are installed in a non-vertical mode, detection deviation caused by direct blowing of airflow is avoided, and the energy storage cabinet multi-parameter intelligent monitoring device based on the MEMS sensor array is obtained. The airflow disturbance correction unit corrects temperature original data in real time and eliminates interference of airflow on module body temperature detection by means of a heat dissipation airflow vector field dynamic model and a compensation algorithm, and the multi-parameter coupling analysis unit processes vibration and temperature signals in a double-channel mode, extracts tab loosening high-frequency micro-vibration characteristics and correlates the temperature rising rate. Early fault logic is triggered through two-stage judgment, the fault decision and output unit fuses the correction temperature, the coupling strength coefficient and the speed-up ratio, graded early warning is generated through a fault tree model and transmitted to an external monitoring system, and accurate monitoring of early faults of the energy storage cabinet is achieved.

A nanoscale temperature detector comprising a diamond sensing probe (1) having a lateral dimension of at least 200 nanometers and having a sensing tip (2) with a radius of curvature (R) of less than 100 nanometers, less than 10 nanometers or less than 1 nanometer and a plurality of color centers (5) showing temperature sensitive features in the emission count rate. The diamond sensing probe (1) has a lateral dimension of at least 200 nanometers and is connected to a detector system (13) by a mounting structure (6). A thermal isolation barrier (3) thermally separates the sensing probe (1) from the detector system (13).

A nanoscale temperature detector including a diamond sensing probe with a transverse dimension of at least 200 nanometres and a sensing tip-having a curvature radius of less than 100 nanometres, less than 10 nanometres or less than 1 nanometre, and a plurality of colour centres, whose emission count rate show temperature-sensitive features. The diamond sensing probe has a transverse dimension of at least 200 nanometres and is connected to a to a detector system by means of a mounting structure. A thermal isolation barrier thermally decouples the sensing probe from the detector system.

Sensor element (100) for measuring a temperature comprising - at least one carrier (2) having a top side (11) and a bottom side (12), wherein an electrically insulating layer (3) is formed on the top side (11) of the carrier (12), wherein the electrically insulating layer (3) completely covers the top side (11) of the carrier (2), - at least one functional layer (7) comprising a material with a temperature-dependent electrical resistance, wherein the functional layer (7) is arranged on the electrically insulating layer (3), - at least two electrodes (4a, 4b) which are formed on the carrier (2) at a distance from one another, wherein the respective electrode (4a, 4b) has a plurality of electrode fingers (5), wherein the electrode fingers (5) of the two electrodes (4a, 4b) are arranged alternately with one another and wherein at least one of the electrode fingers (5) has a comb-shaped region, wherein the comb-shaped region has a plurality of teeth (20) which point in the direction of the subsequent electrode finger (5), and wherein at least one of the electrode fingers (5) has a different shape than the other electrode fingers and wherein the at least one electrode finger (5) is trapezoidal or triangular, - at least two contact pads (10a, 10b) for electrically contacting the sensor element (100), wherein each contact pad (10a, 10b) is arranged directly on a partial area of ​​one of the electrodes (4a, 4b), wherein the sensor element (100) has a maximum edge length of < 500 µm and a thickness < 50 µm, wherein the sensor element (100) is designed to be integrated as a discrete component directly into an electrical system, wherein the sensor element (100) is designed for direct integration into a MEMS structure and / or into a SESUB structure, wherein the sensor element (100) has a narrow resistance tolerance.

The invention discloses a resistance correction structure and method of a thin film temperature sensor, and relates to the technical field of temperature sensors, the resistance correction structure comprises a plurality of resistance correction units connected in series, and each resistance correction unit comprises a plurality of resistance correction resistors connected in parallel and a bypass wire which is connected in parallel with the resistance correction resistors and can be broken by laser. And the resistance correction resistance value of the resistance correction unit is the resistance value difference of the bypass wire in the open-circuit state and the closed-circuit state. All the units have different preset resistance values, and the minimum resistance value is smaller than or equal to the required resistance correction precision. By combining the resistance correction units with different resistance values, adjustment of any resistance value can be realized within a target range. During resistance calibration, the current resistance value of the sensor is measured firstly, the resistance value needing to be adjusted is calculated, and then the corresponding bypass wire is selectively broken through laser. The non-ablation mode that the bypass wire is broken through laser is adopted, the problems that a heat affected zone and precision are limited in traditional laser trimming are solved, and the method has the advantages of being high in precision, simple in process, good in reliability, low in cost and the like.

A wearable device includes a MEMS resonator. The MEMS resonator is configured to generate an output signal that is indicative of a temperature of a portion of the wearable device that contacts a user's skin when the wearable device is worn by the user. The wearable device includes control circuitry communicatively coupled to the MEMS resonator. The control circuitry is configured to demodulate the output signal and a local oscillator signal indicative of a setpoint temperature for the portion of the wearable device. The control circuitry is configured to determine a phase difference between a phase of the demodulated output signal and a phase of the demodulated local oscillator signal. The control circuitry is further configured to determine a temperature of the user's has changed based on the phase difference.

The invention belongs to the technical field of temperature sensors, and particularly relates to a self-driven temperature sensing system based on a friction nanometer generator, which comprises a power supply module, a power supply management module connected with the power supply module, and a signal processing module connected with the power supply management module, the signal processing module performs amplitude normalization processing on the received signal and then transmits the signal to the temperature detection device; the power supply module is composed of a coaxial double-rotor friction nanometer generator and thermal sensitive ceramics, a mechanical decoupling double-power-generation-unit framework is adopted, it is ensured that the two units bear completely same mechanical input conditions through coaxial linkage, and errors caused by rotating speed difference are fundamentally eliminated; secondly, a thermosensitive modulation mechanism is innovatively introduced into circuit design, a temperature variable is converted into an impedance ratio variable quantity, and mathematical decoupling is achieved between a detection signal and the generating capacity; and finally, a priority dynamic power supply strategy is developed, the transmitting frequency of the wireless module is automatically reduced when the energy is insufficient, and the operation of a sensing core function is preferentially ensured. The three key technologies have a synergistic effect, so that the system can still keep the temperature detection precision within + / -0.3 DEG C under the interference of complex environment variables, and no external power supply is needed for supplementation.

An on-chip temperature sensor system and a chip. The on-chip temperature sensor system comprises a first temperature sensing unit and a control unit. The first temperature sensing unit senses a temperature using a back-end-of-line metal structure formed in a back-end-of-line process of the chip to output a temperature sensing electrical signal; the control unit is coupled to the first temperature sensing unit and processes the temperature sensing electrical signal output by the first temperature sensing unit so as to output a measurement result. The temperature sensor system can improve the temperature measurement precision, and achieve the temperature measurement of the back-end-of-line structure in the chip.

A structure includes a negative temperature coefficient (NTC) resistor for use in gallium nitride (GaN) technology. The NTC resistor includes a p-type doped GaN (pGaN) layer, and a gallium nitride (GaN) heterojunction structure under the pGaN layer. The GaN heterojunction structure includes a barrier layer and a channel layer. An isolation region extends across an interface of the barrier layer and the channel layer, and a first metal electrode is on the pGaN layer spaced from a second metal electrode on the pGaN layer. The NTC resistor can be used as a temperature compensated reference in a structure providing a temperature detection circuit. The temperature detection circuit includes an enhancement mode HEMT sharing parts with the NTC resistor and includes temperature independent current sources including depletion mode HEMTs.

An apparatus includes a switched-capacitor resistor that provides an equivalent resistance that can be used as a reference resistor. The switched-capacitor resistor includes a capacitor and a pair of switches that alternately switch (e.g., open and close) in order to charge and discharge the capacitor. The switching frequency of the switches can be controlled by a clock phase generator that generates non-overlapping pulses. To further control the frequency, a frequency locked loop circuit can also be used.

The invention relates to a flexible temperature sensor and a preparation method thereof. The sensor is composed of a flexible substrate, a contact electrode, a power supply electrode, a thin film packaging layer and a Rhine system organic active layer, the contact electrode and the power supply electrode are respectively fixed on the flexible substrate, the Rhine system organic active layer covers the contact electrode and the power supply electrode, the thin film packaging layer is arranged on the surface of the Rhine system organic active layer, and the thin film packaging layer covers the power supply electrode. And the temperature change can be effectively sensed. A contact electrode and a power supply electrode of the sensor adopt a micron channel type electrode, a four-finger electrode or an interdigital electrode, and the channel size of an electrode active layer is 20 * 5 [mu] m. The Reyline system organic active layer is composed of a Rylene group and an imide group, an electrode and the organic active layer are formed on the surface of the flexible substrate through oxygen plasma treatment, vacuum deposition and coating processes, and finally the high-performance flexible temperature sensor is obtained. In addition, the invention further provides three electrode structures and technological methods, and it is ensured that the sensor has high sensitivity and stability.

There is provided a lead for a thermopile, said lead extending through a sheet-like substrate, where the lead comprises a plurality of separate metal nanowires of which at least one nanowire is able to conduct electricity through the substrate, characterized in that the number of metal nanowires in the lead is from 150 to 300.

The present invention discloses a fluorescence lifetime temperature measurement method using dual-path signals. The method uses a temperature probe prepared from a rare earth ion dual-doped nanofluorescent material to detect temperature. The excited state energy of doped ion 1 in the nanofluorescent material is higher than that of doped ion 2. The fluorescence lifetime of doped ion 1 shortens as temperature increases, while the fluorescence lifetime of doped ion 2 increases as temperature increases. A fitting curve of the fluorescence lifetime ratio of doped ion 1 to doped ion 2 versus temperature is used as a calibration curve for the temperature probe. The temperature measurement operating range of the probe is determined based on a theoretical temperature measurement sensitivity curve. The fitting formula corresponding to the calibration curve is used to reversely infer the detected temperature based on the measured fluorescence lifetime ratio. The present invention does not rely on the penetration depth of the probe into the object to be measured and can be used for temperature measurement on the surface of the material. It is also suitable for temperature monitoring in complex environments within the material. The rare earth ion doping system can be flexibly designed to select the fluorescence band corresponding to the acquisition signal. No hardware is required, and the method is low-cost and easy to operate.

A semiconductor device includes a semiconductor body; a gate; a field plate, spaced from the gate, the field plate having a strip-like shape with main extensions along a first direction, the strip-like shape having a first and a second end opposite to one; a first conductive pad in electrical contact with the field plate at the first end through a first connecting region; a second conductive pad in electrical contact with the field plate at the second end through a second connecting region; and a third conductive pad in electrical contact with the field plate at the second end through a third connecting region. The conductive pads allow the use of the field plate as a temperature sensor.

The present invention relates to a temperature sensor (100, 110, 120, 130, 140, 150, 160, 170) comprising: a substrate (10, 12, 14); a nanogranular sensor element (20) deposited on the substrate (10, 12, 14); and at least two electrodes (30, 12), which are electrically connected to the sensor element (20) in order to enable measurement of temperature-dependent changes in the conductivity of the sensor element (20).

The present invention relates to a threshold-triggered tracer particle having at least a reference function and a reporting function as well as to a composition comprising the same. In addition, the present invention relates to a method of quantifying a porous medium with said composition for detecting physical, chemical or biochemical parameters of the porous medium. Further, the present invention also relates to several uses of said threshold-triggered tracer particles.

A sensor includes a detection assembly including a first substrate with a first opening defined therein. A detection membrane extends across the first opening. A sample assembly includes a second substrate with a second opening defined therein. A sample membrane extends across the second opening. The detection assembly and the sample assembly are arranged in a stacked configuration to form a chamber between the sample assembly and the detection assembly. The sample membrane is configured for thermal contact with a sample for measurement.

The present disclosure relates to a ferrofluid contrast agent composition for measurement of absolute temperature by magnetic resonance imaging, MRI, comprising a magnetic nanoparticle comprising at least one metal atom, or at least one lanthanide atom; and at least a capping agent, wherein the magnetic nanoparticle has a temperature-dependent differential between transverse and longitudinal relaxivity for measuring absolute temperature; or has a temperature-dependent differential between MRI proton resonance frequency and a full-width-half-maximum, FWHM, MRI resonance peak for measuring absolute temperature. The use of said contrast agent as a contrast agent for measurement of absolute temperature by magnetic resonance imaging, as well as its use in medicine, is also disclosed.

A spin sensor is provided which is formed from a single diamond particle, wherein a maximum diameter of the diamond particle is greater than or equal to 0.01 µm and less than 10 µm, the diamond particle has a color center, an electronic state of the color center has a spin ground level of spin zero and a spin excitation level of spin ±1, and a spin-spin relaxation time T2 of the diamond particle is 180 nsec or more.

An on-chip temperature sensor system and a chip. The on-chip temperature sensor system comprises a first temperature sensing unit and a control unit. The first temperature sensing unit senses a temperature using a back-end-of-line metal structure formed in a back-end-of-line process of the chip to output a temperature sensing electrical signal; the control unit is coupled to the first temperature sensing unit and processes the temperature sensing electrical signal output by the first temperature sensing unit so as to output a measurement result. The temperature sensor system can improve the temperature measurement precision, and achieve the temperature measurement of the back-end-of-line structure in the chip.

A temperature detector (10) for a heat sensitive product (15) comprises: (a) a carbon or silicon containing material (20) having a heat transfer property variable with temperature, the carbon or silicon containing material being located proximate to a heat sensitive material (15); (b) a sensor (30) for measuring the heat transfer property of the carbon or silicon containing material (20); and (c) a signal generator (40) that provides a signal reflective of the heat transfer property of the carbon or silicon containing material (20) as measured by the sensor (30) and a temperature indication for the heat sensitive product (15).

A semiconductor device (50) comprising: a semiconductor body (52); a gate region (60); a field plate (84), of pure metal material, laterally spaced from the conductive gate region (60), the field plate (84) having, in a top-plan view, a strip-like shape with main extensions along a first direction (Y), the strip-like shape having a first and a second end opposite to one another along said first direction (Y); a first conductive pad (96a) in electrical contact with the field plate (84) at the first end through a first connecting region; a second conductive pad (104) in electrical contact with the field plate (84) at the second end through a second connecting region; and a third conductive pad (106) in electrical contact with the field plate (84) at the second end through a third connecting region. The conductive pads allow the use of the field plate (84) as a temperature sensor.

The invention relates to the field of nanotechnology, more particularly to exerting an utralocalized thermal effect on an object under examination, and even more particularly to controlled heating using a nanodiamond heater. The present ultralocalized optical heating method is based on exposing to laser radiation nanoparticles fixed in the end of a glass capillary that is placed in a medium under examination. An ultralocalized optical heating device for carrying out this method comprises a nanoparticle disposed in a glass capillary that is mounted in a micromanipulator, wherein the nanoparticle is disposed in the end of the glass capillary and is a polycrystalline diamond particle containing amorphous carbon at its grain boundaries, which is optically coupled to a source of laser radiation and to a luminescence recording unit, wherein the diamond particle contains at least one luminescent impurity centre and the glass capillary is placed in a medium under examination.

An MNP machine provides a bias field consisting of a low frequency alternating magnetic field and possibly a static magnetic field to a volume in possibly different directions; RF drive coils driven at an FMR / EPR frequency of MNPs in the bias field, and pickup coils or magnetometers measuring the magnetization induced in the MNPs by the bias fields and possibly the RF absorption. The computer derives MNP MPS / MSB spectra, magnetic particle images, or heats the MNPs using the EPR / FMR frequency field. A method of imaging or localizing the MNPs includes applying a magnetic field gradient; applying RF at an EPR / FMR frequency of the MNPs; sweeping magnetic bias field strength or RF frequency to sweep a resonance surface; applying RF at the EPR / FMR frequency, observing EPR / FMR resonances; rotating the magnetic bias field relative to the subject and resweeping the surface; and reconstructing a three-dimensional distribution of MNPs.

A junction field-effect transistor device includes an integrated temperature sensor, and a method of making the same is disclosed. A temperature sensor material having a first charge carrier polarity is implanted into an area of semiconductor material having a second charge carrier polarity, with the area being located adjacent to the junction field-effect transistor. The sensor material contains dopants and exhibits an electrical resistance that increases with a number of ionized ones of the dopants. The number of ionized dopants increases with the temperature of the material. First and second electrical terminals are provided spaced-apart on the sensor material for measuring the electrical resistance of the material. The measured electrical resistance may be translated into a temperature value for the junction field-effect transistor.

The invention relates to the field of nanotechnology and thermometry and can be used to measure nanoscale ultralocal temperature fields in biomedicine, biotechnology, and microelectronics. The declared method of ultralocal optical temperature measurement is based on the excitation of luminescence of the impurity centers of a diamond particle. The declared method, device and nanodiamond probe of the device can be widely used as a precision device that allows for accurate control of heat flows and temperature measurement in nanoscale volumes of living cells, as well as in microelectronics when measuring the thermal conductivity of integrated cir-cuit elements.

A junction field-effect transistor device includes an integrated temperature sensor, and a method of making the same is disclosed. A temperature sensor material having a first charge carrier polarity is implanted into an area of semiconductor material having a second charge carrier polarity, with the area being located adjacent to the junction field-effect transistor. The sensor material contains dopants and exhibits an electrical resistance that increases with a number of ionized ones of the dopants. The number of ionized dopants increases with the temperature of the material. First and second electrical terminals are provided spaced-apart on the sensor material for measuring the electrical resistance of the material. The measured electrical resistance may be translated into a temperature value for the junction field-effect transistor.

The present invention relates to a threshold-triggered tracer particle having at least a reference function and a reporting function as well as to a composition comprising the same. In addition, the present invention relates to a method of quantifying a porous medium with said composition for detecting physical, chemical or biochemical parameters of the porous medium. Further, the present invention also relates to several uses of said threshold-triggered tracer particles.

An apparatus includes a temperature sensing circuit that includes both on-chip and off-chip components. The apparatus includes components that use the same source as a reference voltage, thus allowing variations in the reference voltage to be compensated for. Additionally, the apparatus can provide error averaging to compensate for deterministic error sources.

A spin sensor configured from one diamond particle having a maximum diameter of 0.01 [mu] m or more and less than 10 [mu] m, the diamond particle having a center of color, the electronic state of the center of color having a spin ground state level of spin zero and a spin excitation level of spin + / -1, the spin transverse relaxation time T2 of the diamond particles is 180 nsec or more.