8results about "Nanotech thermometers" patented technology

The invention discloses a resistance correction structure and method of a thin film temperature sensor, and relates to the technical field of temperature sensors, the resistance correction structure comprises a plurality of resistance correction units connected in series, and each resistance correction unit comprises a plurality of resistance correction resistors connected in parallel and a bypass wire which is connected in parallel with the resistance correction resistors and can be broken by laser. And the resistance correction resistance value of the resistance correction unit is the resistance value difference of the bypass wire in the open-circuit state and the closed-circuit state. All the units have different preset resistance values, and the minimum resistance value is smaller than or equal to the required resistance correction precision. By combining the resistance correction units with different resistance values, adjustment of any resistance value can be realized within a target range. During resistance calibration, the current resistance value of the sensor is measured firstly, the resistance value needing to be adjusted is calculated, and then the corresponding bypass wire is selectively broken through laser. The non-ablation mode that the bypass wire is broken through laser is adopted, the problems that a heat affected zone and precision are limited in traditional laser trimming are solved, and the method has the advantages of being high in precision, simple in process, good in reliability, low in cost and the like.

An on-chip temperature sensor system and a chip. The on-chip temperature sensor system comprises a first temperature sensing unit and a control unit. The first temperature sensing unit senses a temperature using a back-end-of-line metal structure formed in a back-end-of-line process of the chip to output a temperature sensing electrical signal; the control unit is coupled to the first temperature sensing unit and processes the temperature sensing electrical signal output by the first temperature sensing unit so as to output a measurement result. The temperature sensor system can improve the temperature measurement precision, and achieve the temperature measurement of the back-end-of-line structure in the chip.

The present invention relates to a threshold-triggered tracer particle having at least a reference function and a reporting function as well as to a composition comprising the same. In addition, the present invention relates to a method of quantifying a porous medium with said composition for detecting physical, chemical or biochemical parameters of the porous medium. Further, the present invention also relates to several uses of said threshold-triggered tracer particles.

A spin sensor is provided which is formed from a single diamond particle, wherein a maximum diameter of the diamond particle is greater than or equal to 0.01 µm and less than 10 µm, the diamond particle has a color center, an electronic state of the color center has a spin ground level of spin zero and a spin excitation level of spin ±1, and a spin-spin relaxation time T2 of the diamond particle is 180 nsec or more.

The invention relates to the field of nanotechnology, more particularly to exerting an utralocalized thermal effect on an object under examination, and even more particularly to controlled heating using a nanodiamond heater. The present ultralocalized optical heating method is based on exposing to laser radiation nanoparticles fixed in the end of a glass capillary that is placed in a medium under examination. An ultralocalized optical heating device for carrying out this method comprises a nanoparticle disposed in a glass capillary that is mounted in a micromanipulator, wherein the nanoparticle is disposed in the end of the glass capillary and is a polycrystalline diamond particle containing amorphous carbon at its grain boundaries, which is optically coupled to a source of laser radiation and to a luminescence recording unit, wherein the diamond particle contains at least one luminescent impurity centre and the glass capillary is placed in a medium under examination.

A junction field-effect transistor device includes an integrated temperature sensor, and a method of making the same is disclosed. A temperature sensor material having a first charge carrier polarity is implanted into an area of semiconductor material having a second charge carrier polarity, with the area being located adjacent to the junction field-effect transistor. The sensor material contains dopants and exhibits an electrical resistance that increases with a number of ionized ones of the dopants. The number of ionized dopants increases with the temperature of the material. First and second electrical terminals are provided spaced-apart on the sensor material for measuring the electrical resistance of the material. The measured electrical resistance may be translated into a temperature value for the junction field-effect transistor.

A junction field-effect transistor device includes an integrated temperature sensor, and a method of making the same is disclosed. A temperature sensor material having a first charge carrier polarity is implanted into an area of semiconductor material having a second charge carrier polarity, with the area being located adjacent to the junction field-effect transistor. The sensor material contains dopants and exhibits an electrical resistance that increases with a number of ionized ones of the dopants. The number of ionized dopants increases with the temperature of the material. First and second electrical terminals are provided spaced-apart on the sensor material for measuring the electrical resistance of the material. The measured electrical resistance may be translated into a temperature value for the junction field-effect transistor.

An apparatus includes a temperature sensing circuit that includes both on-chip and off-chip components. The apparatus includes components that use the same source as a reference voltage, thus allowing variations in the reference voltage to be compensated for. Additionally, the apparatus can provide error averaging to compensate for deterministic error sources.