46results about How to "Formed easily and precisely" patented technology

A heat sink fan includes a heat sink (2) that is placed on a heat generating electrical component and a fan motor unit (4) having an axial flow fan (18) for supplying cooling air to the heat sink (2). A engaging portions (14a) of an arm portions (14) of the fan motor unit (4) is engaged with a recesses (10b) of the heat sink (2). Thus, movement of the fan motor unit (4) in the axial direction of the heat sink (2) is restricted so that the fan motor unit (4) is attached to the heat sink (2) securely.

A ball screw device includes a ball nut having an inner thread formed by a number of helical groove portions and helical ridges, and an opening and a depression communicating with each other, and a channel communicating with the depression of the ball nut, a radially inserted deflecting member has a block engaged into the opening of the ball nut and an extension extended from the block and engaged into the depression of the ball nut for anchoring the deflecting member to the ball nut. A fastener may be engaged through the deflecting member and engaged with the ball nut for securing the deflecting member to the ball nut.

A composition for forming a resist underlayer film having heat resistance, which is used for a lithography process of semiconductor device production. A resist underlayer film forming composition including a polymer having a unit structure of Formula (1):Preferably, both rings A and B are benzene rings, n1, n2, and n3 are 0, R4 and R6 are hydrogen atoms, or R5 is naphthyl. A method for producing a semiconductor device including: forming an underlayer film by use of the resist underlayer film forming composition onto a semiconductor substrate; forming a hard mask on the underlayer film; forming a resist film on the hard mask; forming a resist pattern by irradiation with light or an electron beam and development; etching the hard mask using the resist pattern; etching the underlayer film by use of the patterned hard mask; and processing the semiconductor substrate by use of the patterned underlayer film.

The present invention provides a resist pattern thickening material, which can utilize ArF excimer laser light; which, when applied over a resist pattern to be thickened e.g., in form of lines and spaces pattern, can thicken the resist pattern to be thickened regardless of the size of the resist pattern to be thickened; and which is suited for forming a fine space pattern or the like, exceeding exposure limits. The present invention also provides a process for forming a resist pattern and a process for manufacturing a semiconductor device, wherein the resist pattern thickening material of the present invention is suitably utilized.

A retaining device for a heat sink includes a retaining piece, a retaining arm, a connection seat and a control member. The retaining piece has one end formed with a retaining hole and a top end formed with two tabs. The retaining arm has a vertical surface formed with a retaining hole. The tabs penetrate through the retaining arm and then the connection seat having an accommodating slot. The control member has a disk and a handle connected thereto. The disk in the accommodating slot has a hollow eccentric control slot. A pivot mounted to the tabs may slide in the control slot. The control member is rotated to move the pivot, which causes a relative movement between the retaining piece and the connection seat so that the retaining hole retains a mounting seat of the heat sink while the retaining arm tightly presses against the heat sink.

A method for manufacturing a planar optical waveguide device including a core of which a top face is provided with a groove section filled with a groove section filler made of a low refractive index material having a refractive index lower than that of the core, the method including; a first high refractive index material layer forming step of forming a high refractive index material layer; a low refractive index material layer forming step of forming a low refractive index material layer made of the low refractive index material on the high refractive index material layer; a groove section filler forming step of forming the groove section filler by trimming both lateral portions of the low refractive index material layer; and a second high refractive index material layer forming step of forming a high refractive index material layer so as to fill the both sides of the lateral portions of the groove section filler.

The object of the present invention is to provide a resist pattern thickening material, etc. which, when coated over a resist pattern formed of ArF resist material, etc., can efficiently thicken the resist pattern such as lines and spaces pattern, etc. regardless of the composition of ArF resist material, and the like; which can easily control the thickening amount of resist pattern by process condition; and which can easily and efficiently form a fine space pattern beyond the exposure (resolution) limits of light sources of the exposure devices at low cost. The resist pattern thickening material of the present invention comprises a solubilizer which melts the resist pattern at the temperature near its melting point and- a water-soluble element. The process for forming a resist pattern of the present invention comprises forming a resist pattern and coating a resist pattern thickening material of the present invention over the surface of the resist pattern.

There is provided a composition for forming a resist underlayer film which has high dry-etching resistance and wiggling resistance, and achieves excellent planarizing properties for a semiconductor substrate surface having level differences or irregular portions. A resist underlayer film-forming composition including a phenol novolac resin that is obtained by causing a compound that has at least three phenolic groups, in which each of the phenolic groups has a structure bonded to a tertiary carbon atom or has a structure bonded to a quaternary carbon atom to which a methyl group binds, to react with an aromatic aldehyde or an aromatic ketone in the presence of an acid catalyst. The phenol novolac resin preferably contains a unit structure of Formula (1), a unit structure of Formula (2), a unit structure of Formula (3), a unit structure of Formula (4), or a combination of these unit structures: