The invention discloses a CMOS APD photoelectric device with low dark current, and belongs to the field of semiconductor photoelectric devices. The device structure comprises a P substrate and further comprises a P trap which is subjected to ion implantation on the P substrate, an N+ layer and two P+ layers are subjected to ion implantation on the P trap, the N+ layer is a cathode, and the P+ layers are anodes. The heavily doped N+ layer and the lightly doped P well layer form a PN junction, namely an avalanche region is formed, an illumination window is arranged, when a light source is emitted into the device and absorbed by the light absorption region, photon-generated carriers are generated, and the photon-generated carriers move to the avalanche region under the action of an electric field to participate in multiplication; STI protection rings are doped at the two ends of the gap of the P well layer, small-size STI protection rings are doped at the two sides of the N + layer, and due to reasonable arrangement of STI, reduction of dark current can be guaranteed, and photocurrent can be effectively detected; and the photoelectric effect and the capacitance are optimized on the design of the device electrode. The design technology is designed from three aspects of PN junction, STI protection ring and electrode arrangement, so the dark current of the device is reduced, it is ensured that the photocurrent can be detected, and the capacitance is reduced.