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Surface Inspection Method and Surface Inspection Apparatus

Provided are a surface inspection method and a surface inspection apparatus that are capable of detecting scattered light from a contaminant particle and a defect at a good S/N even when the relative ratio of background scattered light to the total quantity of scattered light and the anisotropy of background scattered light in angular directions are not relatively large in a case where background scattered light deriving from the surface roughness of a semiconductor wafer has directivity in a direction of an elevation angle or an azimuthal angle and in a case where the directivity of background scattered light changes depending on positions on a wafer to be inspected. In surface inspection according to the present invention, by use of a plurality of photodetectors arranged in a plurality of directions, light scattered, diffracted or reflected on a surface of an object to be inspected or in the vicinity of the surface is detected and a plurality of signals obtained by this are subjected to weighted addition processing or weighted averaging processing by linear combination, whereby a contaminant particle and a defect on a surface of an object to be inspected and the like are detected. The size of a contaminant particle and a defect is calculated from results of the weighted addition processing or weighted averaging processing.
Owner:HITACHI HIGH-TECH CORP
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