The invention provides an RC-IGBT device structure and a manufacturing method thereof, the RC-IGBT device structure comprises a
wafer, the bottom of the
wafer is provided with a back
metal layer, an FRD
cathode and a collector
electrode, the top of the
wafer is provided with a cellular region, and the cellular region comprises a front
metal layer, a P-
Body region, a carrier storage layer, a
Trench gate structure, an N-source region, a P-type deep groove region and the like. A P-
Body region of an IGBT is multiplexed as an FRD
anode, a P-type deep groove region penetrating into an N drift region is designed, and the
layout that the back N + / P + width is accurately matched with half of the size of a front
cell Pitch is matched, so that the through-current path is shortened, the conduction
voltage and loss are reduced, the
voltage resistance and through-current capability are improved, and meanwhile, the
chip area is reduced. The RC-IGBT structure solves the problems of low
cell density, large area and high loss of an existing RC-IGBT, meets the requirements of a power
system for small size,
high power density, low loss and high efficiency, and has remarkable
technical innovation and application value.