2results about How to "Affect thickness" patented technology

This utility model belongs to the field of refrigeration equipment technology, specifically providing a door seal, a refrigeration and freezing equipment, and an injection mold. This utility model aims to solve the problem of excessive thickness in existing door seals after compression. To this end, the door seal of this utility model includes a fixing part and an air bladder part. The fixing part is used to fix the door seal to the door of the refrigeration and freezing equipment; the air bladder part is used to abut against the cabinet of the refrigeration and freezing equipment, so that the door seal seals the cabinet and the door. The air bladder part includes a magnetic strip air bladder for accommodating a magnetic strip and at least one heat-insulating air bladder. In the thickness direction of the magnetic strip air bladder, the number of heat-insulating air bladders overlapping with the magnetic strip air bladder is M, and the total number of bladder walls of the M heat-insulating air bladders and the magnetic strip air bladder in the thickness direction is N, where N = M + 2, and M is a natural number. This utility model effectively reduces the thickness of the door seal after compression, overcoming the aforementioned technical problem.

This application discloses a semiconductor structure and its fabrication method, relating to the field of semiconductor technology. The fabrication method includes: providing a substrate, the substrate including a first device region and a second device region spaced apart; forming an initial stacked structure on each device region, the initial stacked structure including an initial gate structure and a first dielectric layer, the first dielectric layer being located on the side of the initial gate structure away from the substrate; using the first dielectric layer of the first device region as a mask, forming a device filling trench in the first device region; forming a first source / drain electrode in the device filling trench, and removing the first dielectric layer of each device region; forming a second source / drain electrode in the second device region. This stabilizes the gate thickness corresponding to the initial gate structure, improving the performance of the semiconductor structure.