A method of
semiconductor manufacturing is disclosed in which
doping is accomplished by the implantation of
ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster
dopant ions are implanted into a substrate with and without a co-
implant of non-
dopant cluster
ion, such as a carbon cluster
ion, wherein the
dopant ion is implanted into the amorphous layer created by the co-
implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the
semiconductor junctions.
Dopant ion compounds of the form AnHx+ and AnRzHx+ are used in order to minimize
crystal defects as a result of
ion implantation. These compounds include co-implants of carbon clusters with implants of
monomer or cluster dopants or simply implanting cluster dopants. In particular, the invention described herein consists of a method of implanting
semiconductor wafers implanting semiconductor wafers with carbon clusters followed by implants of
boron,
phosphorus, or
arsenic, or followed with implants of dopant clusters of
boron,
phosphorus, or
arsenic. The
molecular cluster ions have the chemical form AnHx+ or AnRzHx+, where A designates the dopant or the carbon atoms, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule which contains atoms which, when implanted, are not injurious to the implantation process (for example, Si, Ge, F, H or C). These ions are produced from chemical compounds of the form AbLzHm, where the
chemical formula of Lz contains R, and b may be a different integer from n and m may be an integer different from x and z is an integer greater than or equal to zero.