30results about How to "Prevent thickness variation" patented technology

According to the package and the method for manufacturing the package of the present invention, a chip can be formed extremely to be thin, and manufactured at lower cost and higher throughput, and the variations of a chip thickness can be reduced without back grind that causes cracks or polishing marks. In the present invention, a semiconductor film with a thickness of at most 500 μm deposited over a substrate serving as a support medium is crystallized with a CW laser light, and a chip having a semiconductor device is formed to have a total thickness of 5 μm, preferably at most 2 μm by using the crystallized semiconductor film. Consequently, the chip is mounted on an interposer after separating a substrate.

A multilayer chip capacitor, and a method for manufacturing the same are Provided. The capacitor comprises a capacitor body having a plurality of dielectric layers stacked therein, a plurality of first and second internal electrodes formed on the dielectric layers, each of the internal electrodes including a main electrode portion and a lead portion, chip-protecting side members formed on both sides of the capacitor body to contact both sides of the first and second internal electrodes, and a pair of external electrodes formed on the outer surface of the capacitor body. The width of the main electrode portion is the same as that of the dielectric layers, and the width of the lead portion is smaller than that of the dielectric layers.

A method for manufacturing a solid-state image pickup device is provided. In this method, a pixel isolation member is formed in a semiconductor substrate including pixels, and the thickness of the substrate is reduced by CMP. For forming the pixel isolation member, a first pixel isolation member is formed by implanting impurity ions in a region of the substrate so that the pixels are disposed between portions of the region when viewed from a surface of the substrate. A second isolation member is also formed by forming a trench in a region of the substrate different from the first pixel isolation member so that the pixels are disposed between portions of the region, and then filling the trench with an electroconductive material harder to polish by CMP than the substrate. The CMP is performed on the rear side of the substrate using the second pixel isolation member as a stopper.

The present invention provides a chemical-mechanical planarization method and a method for fabricating a metal gate in gate last process. The chemical-mechanical planarization method includes: providing a substrate including a gate and source/drain regions on the sides of the gate, the gate and the source/drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP, thereby improving the within-die uniformity of the process, consequently, there will not be excess metal in the insulating layer between gates, thereby preventing device short circuit risk induced by POP CMP process.

The invention discloses a negative electrode current collector comprising a porous metal substrate and a lithium-containing material incorporated in the porous metal substrate, the lithium-containingmaterial being uniformly loaded in pores of the porous metal substrate, and the lithium-containing material being capable of being removed from the pores during a lithium ion battery cycle. The invention also discloses a negative electrode sheet, comprising the negative electrode current collector and a negative electrode active material layer of the negative electrode current collector surface, wherein the negative electrode material layer comprises a negative electrode active material. The invention also discloses a preparation method of the negative electrode current collector and a lithiumion battery.

Upon starting continuous extrusion, the temperature of a hard resin and a soft resin is increased in extrusion sections. A screw of the extrusion section of the hard resin is set at high rpm at first. The hard resin reaches a maximum temperature α(° C.) by heating of friction with the screw, and comes to have high flowability. Upon starting conveyance of an assembly, a large amount of molten hard resin and a small amount of molten soft resin are extruded onto the periphery of a tubular structure. Upon passage of a point A of the tubular structure under annular discharge throats, the extrusion amount of the hard resin starts gradually decreasing, and the extrusion amount of the soft resin starts gradually increasing. Since the temperature of the hard resin starts dropping a short time after the decrease in the extrusion amount, the hard resin maintains the high flowability.

A plating apparatus includes a plating tank and a plating unit that performs electrolytic plating on an object. The plating unit includes a workpiece passage region including a partition wall that allows passage of the plating solution but does not allow passage of the object, the workpiece passage region passing the object from above toward below, an injection unit that injects the plating solution from below toward above, a mixing unit that mixes the plating solution injected by the injection unit and the object to be plated passing through the workpiece passage region, an anode outside the workpiece passage region, a cathode inside the workpiece passage region including a hollow region through which a mixed fluid of the plating solution and the object to be plated passes from below toward above, and a guidance unit that guides the mixed fluid to the workpiece passage region.

Provided is a wiring thin plate capable of suppressing deterioration of an electric characteristic and variation in thickness of an aerial wiring portion while advancing reduction of rigidity of the aerial wiring portion. The wiring thin plate includes an aerial wiring portion including wiring traces and passing over an airspace, aerial base layers provided at the respective wiring traces in the aerial wiring portion and being apart from each other, and an aerial cover layer provided in the aerial wiring portion and spanning from the wiring traces of the aerial wiring portion through the aerial base layers to interspaces between adjacent aerial base layers of said aerial base layers.

The invention discloses a manufacturing method of an electric moistening element. The manufacturing method includes the steps of firstly, providing liquid-state ink, freezing the ink into a crystal state, and grinding the crystal-state ink into powder; secondly, providing a first fluid, mixing the first fluid with the powdered ink obtained in the first step, and coating a substrate below with the mixture along the surface of the substrate, wherein the substrate comprises a pixel wall, and the pixel wall comprises a plurality of pixel cells; the first fluid comprises a solvent, and the solvent is optional one of C6-C16 alkanes, cycloalkanes, aromatic series, aliphatic series or silicone oil; thirdly, filling the pixel cells with the powdered ink obtained in the first step; fourthly, providing an electrolyte solution with the temperature being 80-120 DEG C, and soaking the substrate after the filling into the electrolyte solution for 1-2 hours so as to allow the substrate to absorb the electrolyte solution; fifthly, taking out the substrate, and drying.

A manufacturing method of a multi-laminated body according to the present invention includes a step 1 (L-flow path) for vertically dividing a laminated flow obtained by arranging at least two molten resins adjacent to each other in a lengthwise direction into two sections, guiding the divided laminated flows to opposite directions relative to the flow direction, and then guiding both laminated flows toward the center of the flow direction, and rearranging the laminated flows adjacent to each other in the horizontal direction and thereby joining the laminated flows together, and a step 2 (R-flow path) for vertically dividing a laminated flow obtained by arranging at least two molten resins adjacent to each other in a lengthwise direction into two sections, guiding the divided laminated flows to directions opposite to the above-mentioned directions relative to the flow direction, and then guiding both laminated flows toward the center of the flow direction, and rearranging the laminated flows adjacent to each other in the horizontal direction and thereby joining the laminated flows together, in which the step 1 (L-flow path) and the step 1 (R-flow path) are alternately repeated in this listed order, and a number of the steps to be performed is at least three. According to this method, it is possible to prevent the layer disappearance at both ends, prevent the layer thickness variations or the disruption in the lengthwise arrangement, and thereby manufacture a multi-laminated body having a more excellent uniformity.

In storing a silicon substrate having a silicon oxide film formed thereon, the present invention provides a means for preventing changes in the silicon oxide film thickness. The present invention relates to a method for storing a silicon substrate having a silicon oxide film formed thereon by immersing the substrate in an aqueous medium contained in a case.

A release film for producing a green sheet of the present invention includes a base material having a first surface and a second surface and a release agent layer formed at a side of the first surface of the base material. A maximum projection height Rp₂ of the second surface of the base material is in the range of 60 to 500 nm. An area occupation ratio of projections having a height of 60 nm or higher in the second surface is 10% or less. According to the present invention, it is possible to prevent pinholes and variation in partially thickness from occurring to the green sheet.