30results about How to "Prevent thickness variation" patented technology

A method for manufacturing a solid-state image pickup device is provided. A first pixel isolation member is formed in a semiconductor substrate including pixels by implanting impurity ions in a first region of the substrate to separate pixels in the first region from each other when viewed from a surface of the substrate. A second pixel isolation member is also formed in the substrate by forming a trench in a second region of the substrate different from the first region to separate pixels in the second region from each other, and filling the trench with an electroconductive material harder to polish by CMP than the substrate. The thickness of the substrate is reduced by CMP on a rear surface of the substrate using the second pixel isolation member as a stopper.

The present invention provides a chemical-mechanical planarization method. The chemical-mechanical planarization method includes: providing a substrate including a gate and source / drain regions on the sides of the gate, the gate and the source / drain regions being overlay by an insulating layer, and the insulating layer including a protruding part above the gate and a recessed part above a surface of the substrate between gates; selectively doping the insulating layer such that only the protruding part is doped; and performing CMP on the substrate after doping, to remove the protruding part and planarize the surface of the substrate. By selectively doping the insulating layer, the method makes only the protruding part of the insulating layer doped, enhancing the corrosive attacks on the material of the protruding part by the slurry in the CMP, and increasing the removal rate of the material of the protruding part by the CMP.

The present invention provides a method for preventing an oxide film from becoming thick due to the reaction of the oxide film and a floating gate in a method for manufacturing a flash memory device having a dielectric layer consisting of at least one oxide film between the floating gate and a control gate. To this end, a Si—F bonding layer is formed on the surface of a silicon film constituting the floating gate. The Si—F bonding layer is annealed in a nitrogen gas atmosphere to form a Si—N bonding layer. A dielectric layer is then formed.

The invention provides a lithium ion energy storage device, its pre-lithiation, and a preparation method. Specifically, one or more lithium ion energy storage devices are provided at a predetermined distance outside the cell of the lithium ion energy storage device and in a direction perpendicular to the pole piece. The pre-lithiation electrode is then charged or discharged by the pre-lithiation electrode and the positive electrode and the negative electrode, so that the lithium ions in the pre-lithiation electrode pass through the gap between the positive electrode, the negative electrode and the separator along the direction parallel to the electrode sheet. Entering the inside of the electrode, this pre-lithiation method avoids the design scheme that lithium ions must pass through the pole piece of the energy storage device in the vertical direction in the traditional pre-lithiation method, and completely overcomes the need for positive and negative foils to be holes. The disadvantages of foil and the resulting adverse effects on the preparation efficiency and finished product quality make the preparation process simpler and more controllable. At the same time, this technology can also be used for the secondary lithium replenishment operation of finished lithium ion energy storage devices, which is a lithium ion energy storage device. The regeneration of the energy storage device helps.

Provided is a wiring thin plate capable of suppressing deterioration of an electric characteristic and variation in thickness of an aerial wiring portion while advancing reduction of rigidity of the aerial wiring portion. The wiring thin plate includes an aerial wiring portion including wiring traces and passing over an airspace, aerial base layers provided at the respective wiring traces in the aerial wiring portion and being apart from each other, and an aerial cover layer provided in the aerial wiring portion and spanning from the wiring traces of the aerial wiring portion through the aerial base layers to interspaces between adjacent aerial base layers of said aerial base layers.

A plating apparatus includes a plating tank and a plating unit that performs electrolytic plating on an object. The plating unit includes a workpiece passage region including a partition wall that allows passage of the plating solution but does not allow passage of the object, the workpiece passage region passing the object from above toward below, an injection unit that injects the plating solution from below toward above, a mixing unit that mixes the plating solution injected by the injection unit and the object to be plated passing through the workpiece passage region, an anode outside the workpiece passage region, a cathode inside the workpiece passage region including a hollow region through which a mixed fluid of the plating solution and the object to be plated passes from below toward above, and a guidance unit that guides the mixed fluid to the workpiece passage region.

The method is capable of easily and securely forming a NiP nonmagnetic film. In the method of forming the NiP nonmagnetic film by electrolytic plating, the electrolytic plating is performed in NiP plating solution consisting of: a reagent for supplying nickel ions; a reagent for supplying phosphorus ions; and a reagent including carboxyl groups. For example, sulfates and chloride salts of nickel, etc. may be use as the reagent for supplying nickel ions; phosphorus acid, sodium phosphite, etc. may be used as the reagent for supplying phosphorus ions.