The invention discloses a parallel-
beam angle measurement Faraday device of an
ion implanter, relates to the
ion implanter and belongs to the manufacturing field of semiconductors. The structure is as follows: the parallel-
beam angle measurement Faraday device is composed of a Faraday collection frame, an electronic suppression plate, a bottom plate of the collection frame, seven fixed-angle Faraday cups and a moving
Faraday cup, the Faraday collection frame collects incident
ion beam flow, the electronic suppression plate suppresses the
electron overflow generated by the bombardment on
metal bodies of the Faraday cups by ion beams, the angle collection bottom plate is used for the vacuum connection and the sealing of the Faraday collection frame and the Faraday cups, the seven fixed-angle Faraday cups measure the current intensity of the ion beams, the central position of the implanted ion beams is determined by being combined with the moving
Faraday cup which is arranged in a target room area, when the parallel beams are the incident beams which are perpendicular to a
crystal plane, the central position of the blocking beams of the moving
Faraday cup is consistent with the center of the measuring beams of the fixed Faraday cups, and the current of the fixed-angle Faraday cups simultaneously achieves the
peak value at the position when the current of the moving Faraday cup achieves the
peak value.