The invention discloses a
silicon carbide synthesis method. The
silicon carbide synthesis method includes procedures of filling packing, electrifying and heating, keeping
constant power, naturally cooling and discharging. The
silicon carbide synthesis method is characterized in that at least a
graphite slurry layer is smeared on a burner
graphite electrode on one side of a furnace heating cavity before conduction
graphite powder is filled in the packing filling procedure, and then packing filling procedure for the conduction graphite
powder is carried out. Compared with the prior art, the
silicon carbide synthesis method has the advantages that melt can be prevented from being adhered on the surface of the
graphite electrode, the surface of the
graphite electrode can be cleaned quite easily before next loading, graphite
powder and the melt which are smeared on the surface of the
graphite electrode can be completely removed only by means of lightly scraping the surface of the graphite
electrode by the aid of a scraper, further, water is used as a bonding agent during smearing and volatilizes when heated,
conductivity between the graphite
electrode and the graphite powder of a furnace core is unaffected, the surface of the graphite electrode cannot be damaged, accordingly, the service life of the graphite electrode is greatly prolonged, maintenance frequency is reduced, production efficiency is improved, and production cost is lowered.