An object of the present invention is to provide a
display device where small thin film transistors with a lower off current can be formed. The present invention provides a
display device where thin film transistors are formed on a substrate, and in the above described thin film transistors, a gate
electrode is formed on a
semiconductor layer with a gate insulating film in between, the above described thin film transistors are formed of at least a first
thin film transistor and a second
thin film transistor, and the above described
semiconductor layer is divided into individual regions for each film
transistor, the above described
semiconductor layer is provided with a common region shared either by the drain region of the above described first
thin film transistor and the source region of the above described second thin film
transistor or by the source region of the above described first thin film
transistor and the drain region of the above described second thin film transistor, in the first thin film transistor and the second thin film transistor, the semiconductor layer is provided with LDD regions where the
impurity concentration is lower than in the above described drain region and the above described source region, between the channel region and the drain region, as well as between the channel region and the source region, and the above described gate
electrode is formed so as to overlap with the above described common region in the above described semiconductor layer and face at least the above described channel region and the above described LDD regions of the above described first thin film transistor and the above described channel region and the above described LDD regions of the above described second thin film transistor.