The invention discloses an epitaxial structure for improving light output power of an ultraviolet LED. The epitaxial structure comprises a substrate, a GaN buffer layer, a non-doped GaN layer, a doped N-type GaN layer, a AlGaN/GaN multi-quantum well structure, an insertion layer, an electron barrier layer EBL and a P-type GaN layer which are sequentially arranged from bottom to top, wherein the substrate employs a sapphire substrate, the thickness of the GaN buffer layer is 20-25 nanometers, the growth temperature of the GaN buffer layer is 530-550 DEG C, the GaN buffer layer is recrystallized under heat preservation for 6 minutes at 1,050 DEG C, the thickness of the non-doped GaN layer is 2.0-2.5 micrometers, the growth temperature of the non-doped GaN layer is 1,050 DEG C, the thickness of the doped N-type GaN layer is 2.5-3.0 micrometers, the Si doping concentration is 5*10<18>cm<-3>, the growth temperature is 1,050 DEG C, and the multi-quantum well AlGaN/GaN structure is formed by alternatively growing multi-quantum well AlGaN layers and multi-quantum well GaN layers according to six periods. By improving the crystal quality of an ultraviolet LED chip, the electron barrier effect of the electron barrier layer is optimized, the electron leakage is reduced, so that the efficiency reduction of an ultraviolet LED device is improved, and the light output power is improved.