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169results about How to "Curb tilt" patented technology

Anti-pulling system

An anti-pulling system comprises an upper connecting plate, a lower connecting plate, an upper layer of sliding mechanism, a lower layer of sliding mechanism and intermediate layers, the upper layer of sliding mechanism and the lower layer of sliding mechanism are respectively connected with the upper connecting plate and the lower connecting plate, the intermediate layer is connected between the upper layer of sliding mechanism and the lower layer of sliding mechanism, and the upper layer of sliding mechanism and the lower layer of sliding mechanism have the same structure, are mounted opposite from each other, and can slide in directions perpendicular to each other. The upper (lower) layer of sliding mechanism comprises n sets of upper (lower) guide rails and upper (lower) sliders, the upper (lower) guide rails are mounted in parallel, the upper (lower) sliders are slidably fitted on the upper (lower) guide rails, the top surfaces of the upper guide rails are connected with the upper connecting plate, the top surfaces of the lower guide rails are connected with the lower connecting plate, and the intermediate layers are respectively connected with the bottoms of the upper sliders and the lower sliders. Under the load action of an earthquake or wind, the anti-pulling system can resist the high upward pulling force of a building structure, meanwhile, the anti-pulling system can allow a seismic isolation structure to slide, resist upsetting moment and enhance the anti-leaning or anti-shaking capability of the building structure, and the anti-pulling system can be used along with intermediate seismic isolation rubber bearings and dampers to form a foundation seismic isolation system which can provide the capability of resisting and balancing the horizontal leaning moment of the structure.
Owner:柳州东方工程橡胶制品有限公司

Epitaxial structure for improving light output power of ultraviolet LED

The invention discloses an epitaxial structure for improving light output power of an ultraviolet LED. The epitaxial structure comprises a substrate, a GaN buffer layer, a non-doped GaN layer, a doped N-type GaN layer, a AlGaN/GaN multi-quantum well structure, an insertion layer, an electron barrier layer EBL and a P-type GaN layer which are sequentially arranged from bottom to top, wherein the substrate employs a sapphire substrate, the thickness of the GaN buffer layer is 20-25 nanometers, the growth temperature of the GaN buffer layer is 530-550 DEG C, the GaN buffer layer is recrystallized under heat preservation for 6 minutes at 1,050 DEG C, the thickness of the non-doped GaN layer is 2.0-2.5 micrometers, the growth temperature of the non-doped GaN layer is 1,050 DEG C, the thickness of the doped N-type GaN layer is 2.5-3.0 micrometers, the Si doping concentration is 5*10<18>cm<-3>, the growth temperature is 1,050 DEG C, and the multi-quantum well AlGaN/GaN structure is formed by alternatively growing multi-quantum well AlGaN layers and multi-quantum well GaN layers according to six periods. By improving the crystal quality of an ultraviolet LED chip, the electron barrier effect of the electron barrier layer is optimized, the electron leakage is reduced, so that the efficiency reduction of an ultraviolet LED device is improved, and the light output power is improved.
Owner:GUANGDONG UNIV OF TECH

Flow path selector valve

A flow path selector valve for switching between a cooling state and a heating state by rotation of a main valve (3) together with a auxiliary valve (4), wherein rotational operation of the main valve (3) and the auxiliary valve (4) are simplified to make operation of the main valve (3) reliable and to reduce a switching time. An outdoor heat exchanger-side communication passage (31A) and an indoor heat exchanger-side communication passage (31B) are formed in the main valve (3). An outdoor heat exchanger-side equalizing hole (34a) for connecting the outdoor heat exchanger-side communication passage (31A) to a valve chamber (11) is formed in the main valve. An indoor heat exchanger-side equalizing hole (34b) for connecting the indoor heat exchanger-side communication passage (31B) to the valve chamber (11) is formed in the main valve (3). A closing section (43A) for closing the outdoor heat exchanger-side equalizing hole (34a) and an equalizing hole opening section (45B) for opening the indoor heat exchanger-side communication passage (34b) are also formed in the auxiliary valve (4). A closing section for closing the indoor heat exchanger-side equalizing hole (34b) and an equalizing hole opening section for opening the outdoor heat exchanger-side communication passage (34a) are also formed in the auxiliary valve. A support section sliding on an auxiliary valve seat (34) is formed on the auxiliary valve (4). The main valve (3) is rotated 90 DEG by merely operating the auxiliary valve (4) in either forward or reverse directions, and this switches between the cooling state and the heating state.
Owner:SAGINOMIYA SEISAKUSHO INC
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