A
photoresist composition including a
polymer is disclosed, wherein the
polymer includes at least one
monomer having the formula: where R1 represents
hydrogen (H), a linear, branched or cyclo
alkyl group of 1 to 20 carbons, a semi- or perfluorinated linear, branched or cyclo
alkyl group of 1 to 20 carbons or CN; R2 represents an alicyclic group of 5 or more carbon atoms; X represents a
methylene,
ether, ester,
amide or
carbonate linkage; R3 represents a linear or branched alkylene group or semi- or perfluorinated linear or branched alkylene group with 1 or more carbon atoms; R4 represents
hydrogen (H), methyl (CH3),
trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perflourinated aliphatic group; R5 represents
trifluoromethyl (CF3), difluoromethyl (CHF2), fluoromethyl (CH2F), or a semi- or perfluorinated substituted or unsubstituted aliphatic group; n represents an integer of 1 or more; and OR12 represents OH or at least one
acid labile group selected from a
tertiary alkyl carbonate, a
tertiary alkyl ester, a
tertiary alkyl ether, an
acetal and a ketal. A method of patterning a substrate is also disclosed, wherein the method includes: applying the
photoresist composition mentioned above to the substrate to form a film; patternwise exposing the film to an imaging
radiation source; and developing areas of the film to form a
patterned substrate.