32results about How to "Reduce R&D and manufacturing costs" patented technology

The invention provides a UAV charging device, including a UAV charging positioning mechanism and a charging coil launching platform; the UAV charging and positioning mechanism includes a charging platform transmission device, a bottom plate, a UAV landing plate and a positioning device; The charging platform transmission device includes a front and rear transmission device and a left and right transmission device, and the positioning device includes a left and right positioning device and a front and rear positioning device; after the UAV of the present invention locates the base station by GPS, it lands on the UAV landing area. The interactive mode of the human-machine charging and positioning mechanism can accurately dock with the charging coil launch platform. The docking method is simple and efficient. The R&D and manufacturing costs of the base station and the corresponding module of the drone are low, reducing the dependence of the drone on sensors.

The invention discloses a design method of an axial-flow-type high-power density water jet propulsion pump, and belongs to the technical field of impeller machinery. The implementation method comprises the steps that after the performance of a power machine, the performance of a water jet propulsion system and the mutual influence of the water jet propulsion system and a carrier are comprehensively considered and main parameters of the water jet propulsion system are selected, an equal-head flow increasing method is adopted for determining a design working condition point of the water jet propulsion pump; the circulation distribution of the water jet propulsion pump is determined according to the lift line theory, the shape of the section of each blade is selected, the initial shape of each blade is determined, the final arched surface shape meeting the boundary conditions of the object plane of the arched surface of each blade is determined according to a lift surface method, shapingof the blades of the axial-flow-type water jet propulsion pump is completed, and the design of the high-power density water jet propulsion pump is achieved. By means of the method, the design accuracyof the design working condition point can be further improved, and the development cost of a new model is reduced; the design can be applied to the field of amphibious vehicles and ships to solve related engineering problems.

The invention belongs to the technical field of washing machines, and in particular relates to an outer tub of a washing machine and a washing machine. An outer tub of a washing machine, the upper part of which is provided with an overflow port, wherein, the inner wall of the outer tub of the washing machine is provided with a water retaining rib located below the overflow port, and the water retaining rib extends from bottom to top to cover the overflow port correspondingly, and the overflow port and the water retaining rib There is an overflow gap between them. The outer barrel of the washing machine of the present invention can not only avoid the accidental overflow of the water flow to the outside of the washing machine, but also is safe and reliable. Moreover, it is suitable for washing machines with spray washing function, does not need to re-open new molds, and reduces R&D and manufacturing costs. In particular, it is helpful to improve the effect of spray washing, the washing effect of clothes is better, and the application prospect is good.

The invention discloses an MOS structure trench diode device and a manufacturing method thereof. The MOS structure trench diode device comprises a silicon substrate and an epitaxial layer which are sequentially arranged from bottom to top, wherein a primitive cell trench, a primitive cell large trench, an extension trench and a cut-off trench which are sequentially arranged are formed in the epitaxial layer; the inner side walls of the primitive cell trench, the primitive cell large trench, the extension trench and the cut-off trench are sequentially provided with a silicon dioxide outer layerand a polycrystalline silicon filling layer; a gate oxide layer is arranged in an area between two adjacent primitive cell grooves on the epitaxial layer, and a polycrystalline silicon layer is arranged above the gate oxide layer; first doped regions and second doped regions are arranged on the left sides and the right sides of the tops of the primitive cell groove, the primitive cell large groove, the extension groove and the cut-off groove; third doped regions are arranged on the left side and the right side of the top of the primitive cell groove and the side, close to the primitive cell groove, of the primitive cell large groove. The device also includes a first metal layer and a second metal layer arranged on the left side and the right side. By introducing the voltage division and electric field shielding effects of the trench MOS, the performance of the device is improved, and the application field is broadened.