61results about How to "Surfaces with very little" patented technology

Oxidation methods, which avoid consuming undesirably large amounts of surface material in Si / SiGe heterostructure-based wafers, replace various intermediate CMOS thermal oxidation steps. First, by using oxide deposition methods, arbitrarily thick oxides may be formed with little or no consumption of surface silicon. These oxides, such as screening oxide and pad oxide, are formed by deposition onto, rather than reaction with and consumption of the surface layer. Alternatively, oxide deposition is preceded by a thermal oxidation step of short duration, e.g., rapid thermal oxidation. Here, the short thermal oxidation consumes little surface Si, and the Si / oxide interface is of high quality. The oxide may then be thickened to a desired final thickness by deposition. Furthermore, the thin thermal oxide may act as a barrier layer to prevent contamination associated with subsequent oxide deposition.

A decorative stone composition is disclosed. The decorative stone composition is prepared by the process including mixing an agglomerated stone composition, curing the agglomerated stone composition; treating the surface of the cured agglomerated stone composition with one or more texturing compositions; and curing the one or more texturing compositions.

In a patterned perpendicular magnetic recording medium, embodiments of the present invention provide a magnetic head in which magnetic field to be applied to adjacent tracks can be suppressed and a recording device equipped with the magnetic head. In one embodiment of the present invention, a sum of a width Pw of a main pole of a magnetic head and distances between right and left magnetic substances on a width-directional side of tracks and the main pole, so-called widths of side gap lengths s_g1—1 and s_g1—2 is, in a magnetic recording medium having a soft-magnetic underlayer, made to be not more than a sum of a width w_land of a convexity or land of the soft-magnetic underlayer and widths w_groove—1 and w_groove—2 of concavities or grooves adjacent to the land on both its sides.

Disclosed is that in a method of manufacturing a semiconductor device of the present invention, when first and second P type diffusion layers using as a backgate region, these layers are formed in such a way that their impurity concentration peaks are shifted, respectively. Then, in the backgate region, a concentration profile of a region where an N type diffusion layer is formed is gradually established. After that, impurity ions, which form the N type diffusion layer, are implanted, and thereafter a thermal treatment is performed to diffuse the N type diffusion layer in a y shape at a lower portion of a gate electrode. This manufacturing method makes it possible to implement an electric filed relaxation in a drain region.