The invention belongs to the technical field of
wafer processing, and discloses a multi-section high-flatness
wafer cutting method which comprises the following steps: S1,
wafer pretreatment and stress buffer layer preparation; s2, performing layered rough
cutting by using
a diamond blade; s3,
plasma fine
cutting and interface repairing; s4, performing multi-layer cooling and surface
polishing; and S5, surface quality closed-loop detection is carried out. According to the method,
copper layer residues and resin
carbonization defects are synchronously eliminated.
Cryogenic treatment induces lattice reconstruction through ultrafast
phase change and blocks a
chain reaction of
dislocation defects, so that the intrinsic
mechanical strength of the material is recovered, and a chemical mechanical
polishing system activates the self-repairing characteristic of the material while removing a sub-surface damaged layer through the synergistic effect of
abrasive chemical activity and mechanical shearing force, so that an atomic-scale smooth interface is formed, and the self-repairing performance of the material is improved. A closed-loop detection
system depends on multi-dimensional data fusion and
ion beam fixed-point repair, accurate positioning and
performance recovery of cross-scale defects are achieved, and the
electrical integrity of a
chip functional area is ensured.