The invention relates to a glass substrate through hole
metal filling method which comprises the following steps: S1, providing a glass substrate with a through hole and a micro-
coil array, and placing the glass substrate and the micro-
coil array in a
vacuum coating cavity, so that a first surface of the glass substrate is adjacent to a target material, and a second surface of the glass substrate is adjacent to the micro-
coil array; s2, the
coating cavity is vacuumized,
argon is introduced into the
coating cavity, after the magnetron
sputtering condition is met, the micro-coil array is started, preset current is introduced, and magnetic lines penetrating through all the through holes are generated; and S3, a magnetron
sputtering process is started to generate plasmas of
metal ions and
argon ions, and
metal filling in the through hole is achieved through guiding of magnetic lines of force. The directional
magnetic field is constructed through the micro-coil array, the problems that high-aspect-ratio through hole
metal deposition is uneven, and the hollow defect exists in a traditional technology are solved, the through hole
filling rate and the film thickness uniformity are improved,
low resistance, high compactness and high
binding force of a metal layer are guaranteed, production efficiency and
mass production stability are considered, and the method is suitable for TGV glass substrate
machining in the fields of 5G, AIoT, micro LEDs and the like.