The invention relates to a gallium oxide-based heterojunction integrated photoelectric chip, a remote ultraviolet array monitor and a manufacturing method of the remote ultraviolet array monitor. Thegallium oxide-based heterojunction integrated photoelectric chip comprises a sapphire single crystal substrate, a Sn:beta-Ga2O3 circular film and a composite film which are sequentially arranged, wherein the composite film comprises a La2O3 film, a ZnO film, a NiO film, a Tb2O3 film, a Ta2O5 film, a Sm2O3 film, an Nd2O3 film and a Zn:beta-Ga2O3 film which are located on the same plane and arrangedinto a circle, and further comprises an upper Ti/Au film electrode and a lower Ti/Au film electrode which are in one-to-one correspondence, the upper Ti/Au film electrode is formed on the composite film and is in one-to-one correspondence with the La2O3 film, the ZnO film, the NiO film, the Tb2O3 film, the Ta2O5 film, the Sm2O3 film, the Nd2O3 film and the Zn:beta-Ga2O3 film, and the lower Ti/Aufilm electrode is located on the Sn:beta-Ga2O3 circular film. The gallium oxide-based heterojunction integrated chip prepared by the invention is stable in performance, has high responsivity and sensitivity to a broadband ultraviolet spectrum, is low in dark current, can intelligently identify the wavelength of ultraviolet rays, and has a great application prospect.