The invention discloses a lateral high-voltage bipolar junction transistor and a manufacturing method thereof; comprising a P-type substrate, an N-type buried layer, a P-type buried layer, an N-type epitaxial layer, a P-type isolation penetration region, and an N-type penetration region , P-type body region, N-type heavily doped region, N-type heavily doped ring region, pre-oxidation layer, field oxygen layer, TEOS metal front dielectric layer, emitter metal, collector metal and base metal; the present invention is based on conventional On the basis of the transverse bipolar junction collective tube, an N-type annular injection is added between the collector and the emitter, and then by optimizing the layout of the first layer of metal, the metal is fully covered on the collector. beyond twice the junction depth of the collector region. Through simulation and actual tape-out results, it can be concluded that the horizontal high-voltage bipolar junction transistor of the present invention can increase BVcbo by more than 40%, increase BVceo by more than 30%, and increase the leakage capacity by an order of magnitude when other parameters have little influence. The invention provides a lateral high-voltage bipolar junction transistor.