The invention relates in particular to a method for creating patterns in a layer (410) to be etched, starting from a stack comprising at least the layer (410) to be etched and a masking, layer (420) on top of the layer (410) to be etched, the masking layer (420) having at least one pattern (421), the method comprising at least:a) a step of modifying at least one zone (411) of the layer (410) to be etched via
ion implantation (430) vertically in line with said at least one pattern (421);b) at least one sequence of steps comprising: b1) a step of enlarging (440) the at least one pattern (421) in a plane in which the layer (410) to be etched mainly extends;b2) a step of modifying at least one zone (411′, 411″) of the layer (410) to be etched via
ion implantation (430) vertically in line with the at least one enlarged pattern (421), the implantation being carried out over a depth less than the implantation depth of the preceding, modification step;c) a step of removing (461, 462) the modified zones (411, 411′, 411″), the removal comprising a step of
etching the modified zones (411, 411′, 411″) selectively with respect to the non-modified zones (412) of the layer (410) to be etched.