The invention provides a Schottky diode which comprises anode metal, an N epitaxial layer, an N-type semiconductor substrate, an N cathode layer, cathode metal and three pins. The anode metal is arranged at the top, the N epitaxial layer is arranged below the anode metal and connected with the same, the N-type semiconductor substrate is arranged below the N epitaxial layer and connected with the same, the N cathode layer is arranged below the N-type semiconductor substrate and connected with the same, the cathode metal is arranged below the N cathode layer and connected with the same, the three pins are arranged on the cathode metal and include an anode pin in the middle and cathode pins on two sides, the anode metal is molybdenum, each of the N epitaxial layer, the N-type semiconductor substrate and the N cathode layer is a silicon wafer, silica oxidized insulating layers are arranged on two sides of the anode metal, and a limiting block is arranged on the anode pin and the cathode pins. The Schottky diode has the advantages that the pins are less prone to being bent or broken, less prone to being inserted too deeply when being embedded and free of causing instability in welding.