The invention belongs to the field of
integrated circuit design, provides a scalable model suitable for a terahertz
frequency band CMOS transistor, and is used for solving the problems that in the prior art, the modeling cost is high, the physical significance of a scaling rule is indefinite, the extrapolation capability is limited, terahertz
frequency band modeling is missing and the like. The scalable model comprises an intrinsic network, a
substrate network and a port parasitic network, and the
effective frequency band of the scalable model can reach the terahertz
frequency band; the model accurately describes an NQS effect under a high-frequency condition and comprises a scaling model of a nonlinear NQS
resistor; meanwhile, a scalable grid
capacitance scaling model is embedded in the model, the
capacitance model strictly follows the law of conservation of charge, and the problem that the model is not converged during
simulation is effectively avoided; in addition, the scaling model provided by the invention further comprises scaling rules of a parasitic parameter
system in a
CMOS transistor equivalent circuit; in conclusion, the modeling period is greatly shortened on the premise that the moderate parameter quantity is guaranteed.