This invention belongs to the field of power electronic
power module design, specifically relating to a Si / SiC
hybrid half-bridge
power module and its design method that considers electrothermal synergistic optimization. The upper bridge arm
chip is arranged on the left side of the module, and the lower bridge arm
chip is arranged on the right side. The DC+ and DC- terminals are located in the middle of the module, and the AC terminal is located at the far right. The emitters of the upper and lower bridge IGBT chips are connected to the corresponding
DBC board via eight bonding wires, and the sources of the upper and lower bridge
MOSFET chips are connected to the corresponding
DBC board via four bonding wires. All drive terminals are independently led out and connected to an external drive circuit. The method includes: constructing a Si / SiC
hybrid half-bridge
power module, designing transient and steady-state commutation circuits for the
hybrid half-bridge power module, and then considering
thermal optimization of the module chips. Using the technical solution of this invention, a shorter commutation path is provided for the module, and appropriate
chip spacing improves the module's thermal performance.