The embodiment of the invention provides a photoelectric
detector based on an InGaAs material and a manufacturing method of the photoelectric
detector. The epitaxial structure of the photoelectric
detector sequentially comprises a substrate, an InP buffer layer, an N +-InGaAs
contact layer, an N-type InP, an InGaAsP
band gap transition layer, an InGaAs intrinsic
absorption layer and a P-type dopedgradient InGaAs light window layer from the bottom to the top, wherein the concentration of an InGaAs-doped material in the P-type InGaAs light window layer is gradually changed, an N-type ohmic
electrode is led out from the N-type InP layer through the N +-InGaAs
contact layer, and a P-type ohmic
electrode is led out from the P-type InGaAs light window layer. The embodiment of the invention provides the photoelectric detector and the manufacturing method thereof. The light window adopts an InGaAs material with gradually changed
doping as a P region structure, the structure can establish a
diffusion self-built
electric field in the P region, and the self-built
electric field effectively overcomes the self-absorption problem of
photon-generated carriers, so that the
quantum efficiency andthe response speed of the photoelectric detector are effectively improved, and the transmission requirement of a high-speed communication
system is met.