102results about How to "Reduce equipment capacity" patented technology

A field effect transistor (FET) includes a trench extending into a semiconductor region. A conductive electrode is disposed in the trench, and the conductive electrode is insulated from the semiconductor region by a dielectric layer. The conductive electrode includes a conductive liner lining the dielectric layer along opposite sidewalls of the trench. The conductive liner has tapered edges such that a thickness of the conductive liner gradually increases from a top surface of the conductive electrode to a point in lower half of the conductive electrode. The conductive electrode further includes a conductive fill material sandwiched by the conductive liner. The FET further includes a drift region of a first conductivity type in the semiconductor region, and a body region of a second conductivity type extending over the drift region. Source regions of the first conductivity type extend in the body region adjacent the trench.

The present invention makes it possible to transfer information between processors by a method that places little burden on the reception side processors. The information processing device is a device that processes information using a plurality of processors, comprising one or more first processors that have one or a plurality of local memories, and one or more second processors that write write information directly into the local memory that the target first processor has. The second processors store address maps in which local memory addresses for the first processors are recorded; these second processors acquire local memory addresses from these address maps, and write write information into the acquired local memory addresses.

A modular electronic device where (predominantly) sealed modules are aligned and attached/connected in pre-determined sequences, forming a robust block-like structure with extendable function: Control and/or inter-module communication are implemented without direct electrical interconnect, by non-contact means such as (magnetic, inductive, light, infrared, radio frequency, sound, ultrasound, or other non-contact means). This device's inter-module power transfer may be with or without direct electrical contact, or devices may be internally powered. Power transfer through inductive/transformer action where one or more alignment pins are used as transformer core is one potential implementation. Modules may be fluid filled to facilitate cooling and/or crush resistance to high-pressure environments.

The present disclosure provides an integrated circuit. The integrated circuit includes a semiconductor substrate having an active region; at least one operational device on the active region, wherein the operational device include a strained channel; and at least one first dummy gate disposed at a side of the operational device and on the active region.

An underlying layer (2) made of NiFeN is disposed over the principal surface of a substrate. A pinning layer (3) made of antiferromagnetic material containing Ir and Mn is disposed on the underlying layer. A reference layer (4c) made of ferromagnetic material whose magnetization direction is fixed through exchange-coupling with the pinning layer directly or via another ferromagnetic material layer, is disposed over the pinning layer. A nonmagnetic layer (7) made of nonmagnetic material is disposed over the reference layer. A free layer (8) made of ferromagnetic material whose magnetization direction changes in dependence upon an external magnetic field, is disposed over the nonmagnetic layer.

An exposure apparatus is equipped with a main controller that decides an operation of the exposure apparatus based on information on maintenance from a C/D. Therefore, the main controller can decide to perform a specific operation, which is necessary for maintaining performance of the exposure apparatus and requires stop of the primary operation of the exposure apparatus, during maintenance of the C/D, that is, when the primary operation of the exposure apparatus has to be stopped by necessity, in parallel with the maintenance of the C/D. As a consequence, downtime of the exposure apparatus necessary for performing the specific operation can be decreased as a whole, which makes it possible to improve the operating rate without lowering apparatus performance of the exposure apparatus that is inline connected to a substrate processing apparatus.

A device, with piezoresistive detection comprising at least:

• • a proof body on which an effort to be measured is exerted,
  • means of detecting a strain exerted by the proof body under the action of the effort, comprising at least one suspended piezoresistive strain gauge,
  • a strain amplifier cell comprising at least two rigid arms mechanically linked to each other by at least one link element at the level of a first of their ends, a second end of a first of the two rigid arms being mechanically linked to the proof body, a second end of a second of the two rigid arms being fixed to the substrate, the link element being mechanically linked to a first end of the suspended piezoresistive strain gauge.

The present disclosure provides a method for making a semiconductor device. The method includes forming a first material layer on a substrate; forming a second material layer on the first material layer; forming a sacrificial layer on the second material layer; forming a patterned resist layer on the sacrificial layer; applying a first wet etching process using a first etch solution to the substrate to pattern the sacrificial layer using the patterned resist layer as a mask, resulting in a patterned sacrificial layer; applying an ammonia hydroxide-hydrogen peroxide-water mixture (APM) solution to the substrate to pattern the second material layer, resulting in a patterned second material layer; applying a second wet etching process using a second etch solution to the substrate to pattern the first material layer; and applying a third wet etching process using a third etch solution to remove the patterned sacrificial layer.

In a digital multi-function peripheral, image data to be output and first log information are generated based on an image forming job. Second log information embedded as digital watermark information is detected from the image data, and the reliability of the digital watermark information is computed. If the reliability is high, the first log information is held in a property storage unit 114 in an image management server 110. If the reliability is low, the first log information is held in the property storage unit 114 and the image data is held in a volume storage unit.

An organic electroluminescent device provided with a lower electrode formed on a substrate, a light emitting unit having at least an organic light emitting layer and formed on the lower electrode, and a light transmissive upper electrode formed on the light emitting unit, wherein a connection layer for supplying a charge into the light emitting unit and a charge transport layer having charge transporting properties of a reverse conducting type against a charge to be injected from the upper electrode are stacked in this order from a side of the light emitting unit between the light emitting unit and the upper electrode.

Provided is an organic light emitting device. The organic light emitting device includes a plurality of light emitting units laminated between a first electrode and a second electrode and each including an organic emitting layer, and a charge generation layer between the light emitting units. Further, the charge generation layer includes an N-type charge generation layer disposed to be in direct contact with an organic emitting layer of the adjacent light emitting unit and HOMO levels of the N-type charge generation layer and the organic emitting layer are regulated. Thus, a color change rate based on a viewing angle can be improved, and efficiency and a lifetime of the organic light emitting device can be improved.

The invention provides a testing method and device of thyristor switching stress, which has comprehensive functions and meets the testing requirements of the thyristor switching stress under various working conditions of a converter valve. Moreover, the topological structure of a circuit is simple and practical, the required equipment capacity is small, and the device cost is low. The testing for a single thyristor is directly carried out by the method, the capability of each thyristor inside for enduring switching voltage and current can be checked before the converter valve is assembled, and therefore the producing and manufacturing safety and economical property of the converter valve are improved. In addition, the testing strength of electrothermal stress can be improved by adjusting testing parameters by the method, and therefore the limiting tolerance value of the thyristor switching stress can be known through continuous tests, and bases are provided for the optimal design of a converter-valve system.

A MEMS microphone has a backplate and a movable diaphragm that together form a variable capacitance. The backplate has a backplate surface and, in a corresponding manner, the diaphragm has a diaphragm surface that faces the backplate surface. At least one of the backplate surface and the diaphragm surface has at least a portion with a Hurst exponent that is less than or equal to about 0.5.

A quantum-well photoelectric device, such as a quantum cascade laser, is constructed of monocrystalline nanoscale membranes physically removed from a substrate and mechanically assembled into a stack.

A method of synthesizing mechanically resilient titanium carbide (TiC) nano-fibrous felts comprising continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix, comprising: (a) electrospinning a spin dope for making precursor nanofibers with diameters less than 0.5 μm; (b) overlaying the nanofibers to produce a nano-fibrous mat (felt); and then (c) heating the nano-felts first at a low temperature, and then at a high temperature for making electrospun continuous nanofibers or nano-ribbons with TiC crystallites embedded in carbon matrix; and (d) chlorinating the above electrospun nano-felts at an elevated temperature to remove titanium for producing carbon-derived-carbon (CDC) nano-fibrous felt with high specific surface areas.

A method of forming an interconnect structure with high process margin. The present invention provides higher aligning margin for the connection of via parts and line parts. The method for forming the interconnect structure includes the steps of: forming a first mask layer with a plurality of first openings over the first insulating layer; forming a second insulating layer over the mask layer; forming a second mask layer with a plurality of second openings over the second insulating layer; performing an etching process by using the second mask layer to form a plurality of cavities penetrating through the second insulating layer, the first mask layer, and the first insulating layer; and filling the plurality of cavities with at least one conductive material.

A design structure embodied in a machine readable medium is provided for use in the design, manufacturing, and/or testing of Ics that include at least one SRAM cell. In particular, the present invention provides a design structure of an IC embodied in a machine readable medium, the IC including at least one SRAM cell with a gamma ratio of about 1 or greater. In the present invention, the gamma ratio is increased with degraded pFET device performance. Moreover, in the inventive IC, there is no stress liner boundary present in the SRAM region and ion variation for all devices is reduced as compared to that of a conventional SRAM structure. The present invention provides a design structure of an IC embodied in a machine readable medium, the IC comprising at least one static random access memory cell including at least one nFET and at least one pFET; and a continuous relaxed stressed liner located above and adjoining the at least one nFET and the at least one pFET.