123 results about "Electrical interaction" patented technology

A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one or more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and / or semiconductor circuitry may be disposed in single package and / or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction. Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set / reset circuitry for the MR sensors, accelerometers, pressure sensors, position-sensing circuitry, compassing circuitry, etc.

A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing a semiconductor layer, with their respective channel regions provided on different surfaces of the semiconductor layer. The semiconductor layer has a thickness, such that when a pass voltage is applied to the gate electrode of the access device, the access device and the memory device remains isolated, such that the charge stored in the memory device is unaffected by the pass voltage. The pass voltage is determined from a range of voltages, when applied to the access device, has no effect on the threshold voltage of the memory device. The dual-gate memory cells can be used as building blocks for a non-volatile memory array, such as a memory array formed by NAND-strings. In such an array, during programming of a nearby memory device in a NAND string, in NAND-strings not to be programmed, if inversion regions are allowed to be formed in the semiconductor layer, or if the semiconductor layer is allowed to electrically float, electrical interaction exists between the access devices and the memory devices to inhibit programming of the memory devices.

A method of calculating electrical interactions of circuit elements in an integrated circuit layout without flattening the entire database that describes the layout. In one embodiment, a hierarchical database is analyzed and resistance and capacitance calculations made for a repeating pattern of elements are re-used at each instance of the repeated pattern and adjusted for local conditions. In another embodiment, a circuit layout is converted into a number of tiles, wherein the resistance and capacitance calculations made for the circuit elements in the center and a boundary region of the tiles are computed separately and combined. Environmental information that affects electrical interaction between circuit elements in different levels of hierarchy is calculated at a lower level of hierarchy so that such calculations do not need to be made for each placement of a repeated cell and so that not all interacting elements need to be promoted to the same hierarchy level to compute the electrical interactions.

An apparatus for effecting non-contact linear door displacement comprising a tubular motor formed of a stator (1) formed from a plurality of magnets (21) arranged along a linear axis (15), and at least one thrust block (3) each formed of at least one electrically conductive coil encircling the stator (1) at a distance sufficient to facilitate electro-mechanical interaction between the plurality of coils and the stator (1), at least one door (5) attached to at least one of the plurality of thrust blocks (3) via a hanger (9) and the at least one door (5) capable of a movement in the direction of the linear axis (15), a rolling component (11) to enable movement of the hanger (9) in the direction of the linear axis (15), and a control mechanism (70) for sensing the position of each of the at least one door (5) and issuing an electrical control signal to each of the plurality of thrust blocks (3) so as to affect the movement of the at least one door (5).