123 results about "Electrical interaction" patented technology

A magnetic-sensing apparatus and methods of making and using thereof are disclosed. The sensing apparatus may have one or more magneto-resistive-sensing elements, one or more reorientation elements for adjusting the magneto-resistive-sensing elements, and semiconductor circuitry having driver circuitry for controlling the reorientation elements. The magneto-resistive-sensing elements, reorientation elements and / or semiconductor circuitry may be disposed in single package and / or monolithically formed on a single chip. Alternatively, some of the semiconductor circuitry may be monolithically formed on a first chip with the magneto-resistive-sensing elements, while a second portion of the semiconductor circuitry may be formed on a second chip. The first and second chips may be placed in close proximity and electrically connected together. Alternatively the chips may have no intentional electrical interaction. Exemplary semiconductor devices that might be implemented include, without limitation, capacitors, inductors, operational amplifiers, set / reset circuitry for the MR sensors, accelerometers, pressure sensors, position-sensing circuitry, compassing circuitry, etc.

A memory circuit having dual-gate memory cells and a method for fabricating such a memory circuit are disclosed. The dual-gate memory cells each include a memory device and an access device sharing a semiconductor layer, with their respective channel regions provided on different surfaces of the semiconductor layer. The semiconductor layer has a thickness, such that when a pass voltage is applied to the gate electrode of the access device, the access device and the memory device remains isolated, such that the charge stored in the memory device is unaffected by the pass voltage. The pass voltage is determined from a range of voltages, when applied to the access device, has no effect on the threshold voltage of the memory device. The dual-gate memory cells can be used as building blocks for a non-volatile memory array, such as a memory array formed by NAND-strings. In such an array, during programming of a nearby memory device in a NAND string, in NAND-strings not to be programmed, if inversion regions are allowed to be formed in the semiconductor layer, or if the semiconductor layer is allowed to electrically float, electrical interaction exists between the access devices and the memory devices to inhibit programming of the memory devices.