The invention discloses a maskless projection
lithography system. The maskless projection
lithography system comprises a
Laser, an LS collimating lens group, a DOE (diffractive optical element), an LSR
laser speckle attenuator, an LCOS reflective
liquid crystal spatial light modulator, a Tube Lens, an Objective infinity conjugate
microscope, a
Photoresist photolithography plate, a L1 lens, a L2 lens, a P1 polarizing element and a P2 polarizing element; a
laser is transmitted to the LS collimating lens group, the DOE, the L1 lens, the LSR
laser speckle attenuator, the L2 lens, the P1 polarizingelement, a PBS polarization splitting
prism, the LCOS reflective
liquid crystal spatial light modulator, the P2 polarizing element, the Tube Lens, and the Objective infinity conjugate
microscope andis finally projected and imaged on the
Photoresist photolithography plate. Through control of the parameter designs of the DOE, the L1 lens and the L2 lens, the area of the collimation light irradiated on the LCOS is equal to the area of the effective pixel of the collimation light to fully utilize the
light energy, effectively reduce the edge
diffraction phenomenon and improve the projection andimaging quality.