40results about How to "Closer packing" patented technology

A falling off of a through electrode is inhibited without decreasing a reliability of a semiconductor device including a through electrode. A semiconductor device 100 includes: a silicon substrate 101; a through electrode 129 extending through the silicon substrate 101; and a first insulating ring 130 provided in a circumference of a side surface of the through electrode 129 and extending through the semiconductor substrate 101. In addition, the semiconductor device 100 also includes a protruding portion 146, being provided at least in the vicinity of a back surface of a device-forming surface of the semiconductor substrate 101 so as to contact with the through electrode 129, and protruding in a direction along the surface of the semiconductor substrate 101 toward an interior of the through electrode 129.

A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each memory stack is located at an intersection region between two orthogonal write lines. Each cell in the stack is a “toggle” cell that has its synthetic antiferromagnet (SAF) free layer easy axis of magnetization aligned nonparallel with the X and Y axes and angularly spaced about the Z axis from the easy axes of magnetization of all the other SAF free layers in the stack. Each cell in a stack is magnetically separated from adjacent cells in the stack by a nonmagnetic separation layer. The magnetization direction of the free layer in a selected memory cell in a stack can be switched without switching the magnetization directions of the free layers in the other memory cells in the stack.

A wedge-shaped receptacle (9) is provided for packaging felting needles (8). The wedge shape is configured in such a manner that the felting needles lie in the receptacle in a mutual lateral engagement, that is, they are held approximately parallel to one another and they firmly clamp one another without their tips abutting against the receptacle body. This, on the one hand, results in a particular protection of the felting needles (8) during transportation and, on the other hand, results in a simple handling with the lowest danger of injuries.

A bioNEMS device comprises a piezoresistive cantilever having flexing legs of which attach the cantilever to a support and a biofunctionalized portion at the tip. A bias current applied to the legs is limited by a maximal acceptable temperature increase at the biofunctionalized tip. The length of the cantilever has a magnitude chosen to minimize background Johnson noise. A catalyzed receptor on the device binds to a ligand whose binding rate coefficient is enhanced. The catalyst lowers the receptor-ligand binding activation energy and is designed by forced evolution to preferentially bind with the ligand. A carrier signal is injected by a magnetic film disposed on the cantilever which is electromagnetically coupled to a source of the carrier signal. A plurality of NEMS fluidicly coupled transducers generate a plurality of output signals from which a collective output signal is derived, either by averaging or thresholding. The NEMS devices are disposed in microfluidic flow channels and fabricated in a membrane. A linking molecule is attached to the tip of the transducer and a fluffball attached to the linking molecule to increase damping.

The present invention involves a fabrication of ventilation-fan-ammonia-gas-removal-device and dual-function-ammonia-gas-removal-and-air-cooling-equipment for application to livestock confined facilities. The former is installed on the wall of livestock confined facilities to remove ammonia gas from ventilating air and the latter is installed inside the livestock confined facilities to remove ammonia gas and to cool air, suspending from the ceiling of livestock confined facilities. They are fabricated by assembling several plastic-rod-screen-fills which are made with plastic rods. Water supplied from the top of devices, flowing down on the surface of rods, cools air or absorbs ammonia gas and water vapor by contacting with air traveling transversely to the descent of water on the surface of plastic rods by means of forced draft. The dual-function-ammonia-gas-removal-and-air-cooling-equipment has high ammonia gas removal and air cooling efficiencies and also the ventilation-fan-ammonia-gas-removal-device high ammonia gas removal efficiency. Their fabrication methods are described in the present invention.

The present invention discloses a switching matrix configuration to reduce the optical propagation losses and coupling losses. The switching matrix comprises M horizontal waveguides interested with 2N vertical waveguides, where M and N are positive integers and the optical switching system is configured to receive a multiplexed input optical signal from a horizontal waveguide disposed next to an i-th horizontal waveguide where i is a closest integer to a positive real number M/2.

An apparatus is disclosed for providing easier, more ergonomic access to parts stored in a shipping container to be used in a manufacturing environment. Shipping containers having trays with packaging cells for containing production parts may be accessed by a person whose responsibility it is to remove the parts from the container for use on an assembly line, for example. By enabling the trays containing packaging cells to be moved forward as parts are removed from the container, the person's job is rendered easier to access parts that would have otherwise remained at the rear of the container. In a preferred embodiment, the packaging cells or packs are arranged to slidably move closer to the person removing the parts.

Bulk CMOS RF switches having reduced parasitic capacitance are achieved by reducing the size and/or doping concentration of the switch's N-doped tap (N-Tap) element, which is used to conduct a bias voltage to a Deep N-Well disposed under each switch's P-Type body implant (P-Well). Both the P-Well and the N-Tap extend between an upper epitaxial silicon surface and an upper boundary of the Deep N-well. A low-doping-concentration approach utilizes intrinsic (lightly doped) N-type epitaxial material to provide a body region of the N-Tap element, whereby an N+ surface contact diffusion is separated from an underlying section of the Deep N-well by a region of intrinsic epitaxial silicon. An alternative reduced-size approach utilizes an open-ring deep trench isolation structure that surrounds the active switch region (e.g., the Deep N-well and P-Well), and includes a relatively small-sized N-Tap region formed in an open corner region of the isolation structure.

A field emission tip includes a base with a central portion and a tapered portion. The central portion of the base includes a peripheral surface, at least a portion of which is oriented substantially vertically or perpendicularly relative to a plane in which a substrate from which the field emission tip protrudes resides. An apex may be located at an exposed end of the central portion of the base. The tapered portion of the base includes an inclined surface that extends toward the exposed end of the central portion of the base. The tapered portion of the base may be formed from material that is redeposited as the emission tip is fabricated. The apex may be formed, at least in part, from a low work function material, such as one or more of aluminum titanium silicide, titanium silicide nitride, titanium nitride, tri-chromium mono-silicon, and tantalum nitride. Field emission arrays and field emission displays that include such field emission tips are also disclosed.

A seat support structure including an elastomeric panel. The elastomeric panel positions and supports a seated occupant. The panel is constrained on a forward side and a rearward side.