116results about How to "Functional impairment" patented technology

A composite resistive to high-temperature corrosion and abnormal oxidization, maintains original excellent high-temperature characteristics of Ni alloys over a long period of time, and suitable for applications in a high-temperature such as gas turbines, jet engines, and elements for exhaust-gas systems. A heat-resistant Ni-alloy composite has excellent high-temperature oxidation resistance, including a Ni-alloy substrate that has been subjected to an Al-diffusing treatment. The surface coat has a multi-layer structure including an inner layer composed of an α-Cr phase and an outer layer composed of a β phase (Ni—Al—Cr) and a γ′ phase (Ni3Al(Cr)) on the substrate surface. The Al content in the outer layer is at least 20 atomic percent. The α-Cr phase functions as a diffusion-barrier layer. The outer layer retains and secures a high Al content required for self-regeneration of a defective portion of the Al2O3 layer damaged in an operating condition.

An apparatus and method for identifying the flexor retinaculum of the carpal tunnel, injecting an effective amount of an agent into at least a portion of flexor retinaculum or tissue adjacent thereto, wherein the agent is configured to weaken the flexor retinaculum. The system may further include means for increasing the tensile stress in the flexor retinaculum post-injection using hand exercises, thereby weakening its structural integrity and decreasing the pressure within the carpal tunnel that impairs median nerve function.

A switching semiconductor device is provided, in which a negative gate voltage can be applied to the semiconductor device in an OFF state so as to increase a breakdown voltage of the gate junction without impairing a normally-off function of the semiconductor device and the ON-resistance. The switching semiconductor device is fabricated by using a semiconductor substrate with a band gap of 2.0 eV or more. In a JFET structure where a p+ type gate region and an n type source region are in contact so that a negative gate voltage can be applied, the p+ type gate region and an n+ type source region with a high impurity concentration are disposed with interposing an n type source region with an impurity concentration lower than that of the p+ type gate region and higher than that of a drift region of the JFET therebetween.