This application relates to the field of
semiconductor memory technology and discloses a 1S1R type memory device and its fabrication method. The 1S1R type memory device includes, from bottom to top, a bottom
electrode, a selector switch layer, a middle
electrode, a
resistive switching layer, an
oxygen storage layer, and a top
electrode. The bottom electrode, selector switch layer, and middle electrode constitute a selector unit, and the middle electrode,
resistive switching layer,
oxygen storage layer, and top electrode constitute a
resistive switching memory unit. The middle electrode is a common electrode for both the selector unit and the
resistive switching memory unit. The thickness of the selector switch layer is 10–500 Å, the thickness of the resistive switching layer is 10–200 Å, and the thickness of the
oxygen storage layer is 10–500 Å. This application, through the vertical series structure of the selector unit and the
resistive switching memory unit, suppresses leakage paths in the cross array while maintaining the
resistive switching memory function. Furthermore, by using the
oxygen storage layer to participate in the regulation of oxygen-related components in the resistive switching layer, it improves the device's read / write capability and array integration adaptability.