42results about How to "Variation is suppressed" patented technology

A method of manufacturing a semiconductor thin film includes (A) forming an amorphous semiconductor film on a substrate, (B) irradiating a beam to a surface of the amorphous semiconductor film such that a predetermined region of the amorphous semiconductor film is melted and solidified to form a crystallized semiconductor film, and (C) scanning the beam in a first direction. A second direction is a direction on the surface of the amorphous semiconductor film perpendicular to the first direction. A length along the second direction of a cross section of the beam is substantially equal to or less than two times a width along the second direction of the crystallized semiconductor film.

There is provided a liquid crystal display device of high picture quality with high brightness and small display unevenness.

A vertical alignment type liquid crystal display device which has a plurality of pixels includes: a first electrode which includes, in each of the plurality of pixels, a plurality of first branch portions extending in a first direction and a plurality of second branch portions extending in a second direction that is different from the first direction; a second electrode disposed so as to oppose the first electrode; and a liquid crystal layer interposed between the first electrode and the second electrode, wherein a width of each of the plurality of first branch portions and the plurality of second branch portions is in a range not less than 1.4 μm and not more than 8.0 μm.

A cell includes a plurality of diffusion region pairs, each of the diffusion region pairs being formed by a first impurity diffusion region which is a constituent of a transistor and a second impurity diffusion region such that the first and second impurity diffusion regions are provided side-by-side in a gate length direction with a device isolation region interposed therebetween. In each of the diffusion region pairs, the first and second impurity diffusion regions have an equal length in the gate width direction and are provided at equal positions in the gate width direction, and a first isolation region portion, which is part of the device isolation region between the first and second impurity diffusion regions, has a constant separation length. In the diffusion region pairs, the first isolation region portions have an equal separation length.

A solid-state imaging apparatus includes a plurality of pixels each including a photoelectric conversion unit and pixel transistors, which are formed on a semiconductor substrate; a floating diffusion unit in the pixel; a first-conductivity-type ion implantation area for surface pinning, which is formed over the surface on the side of the photoelectric conversion unit and the surface of the semiconductor substrate; and a second-conductivity-type ion implantation area for forming an overflow path serving as an overflow path for the floating diffusion unit, the second-conductivity-type ion implantation area being formed below the entire area of the first-conductivity-type ion implantation area. An overflow barrier is formed using the second-conductivity-type ion implantation area. A charge storage area is formed using an area in which the second-conductivity-type semiconductor area and the second-conductivity-type ion implantation area superpose each other.

This invention relates to a load sensor-equipped operating apparatus, which comprises an operational member (16) which is movably operated; a reaction force member (22) which receives an operating force of the operational member transmitted thereto, and on which a reaction force corresponding to the operating force is acted; at least one pivotal connecting portion (20) which is interposed between the operational member and the reaction force member, and pivotably connects a pair of a first member and a second member relative to each other to transmit the operating force; and a load sensor (30) which electrically detects the operating force. The load sensor-equipped operating apparatus is characterized by that the load sensor includes a shaft-like member (36), a main body member (34) disposed to be relatively displaced in a direction perpendicular to an axis of the shaft-like member, a deformable member (32) bridging the shaft-like member and the main body member, and a strain detecting element (40a to 40d) which is secured to the deformable member, and the shaft-like member and the main body member are relatively displaced by the reaction force in the direction perpendicular to the axis of the shaft-like member to deform the deformable member so that the strain detecting element detects the deformation of the deformable member; a transmittal link (60), one end of which is connected to the first member by a connecting pin, and other end of which is integrally secured to one of the shaft-like member and the main body member of the load sensor; other of the shaft-like member and the main body member of the load sensor is connected to the second member; and the connecting pin is arranged, in a front view of the load sensor as viewed in the axial direction, on an acting line of the load which is applied to the load sensor associating with a movable operation of the operational member, at a position generating tensile force in the transmittal link, so that a pivotal movement of the transmittal link about the connecting pin or the load sensor associating with the movable operation of the operational member maintains the direction of relative displacement between the shaft-like member and the main body member of the load sensor constant.

An electrode is used for an electric storage device that includes plural electrodes that are stacked such that an ion-conductive layer is disposed between each pair of the electrodes. Each of the plural electrodes includes a current collector, and an electrode layer, formed on the current collector, which contains an active material. The configuration of the electrode layer (for example, the amount of the active material) varies according to the position in the electrode layer such that a current density in a first region of the electrode, where heat radiation performance is lower than the heat radiation performance in a second region of the electrode, is lower than the current density in the second region of the electrode.

A method for producing an electrostatic chuck includes the steps of (a) placing a ceramic slurry in a molding die, the ceramic slurry containing a ceramic powder, a solvent, a dispersing agent, and a gelling agent, gelatinizing the ceramic slurry in the molding die, and removing the molding die to obtain first and second ceramic molded bodies; (b) drying, debinding, and calcining the first and second molded bodies to obtain first and second ceramic calcined bodies; (c) printing an electrostatic electrode paste on a surface of one of the first and second ceramic calcined bodies to form an electrostatic electrode while assuming the first ceramic calcined body is to form a dielectric layer of an electrostatic chuck; and (d) superposing the first and second ceramic calcined bodies on each other to sandwich the electrostatic electrode and subjecting the first and second calcined bodies to hot-press firing.

A phase shifter includes dielectric members including facing portions facing a signal line formed on a surface of a substrate and being made of a dielectric material, a supporting member configured to support the dielectric members and receive a moving force for moving the dielectric members in a direction which is parallel to the substrate and crosses the signal line, and a moving mechanism configured to apply the moving force to the supporting member. At least either the dielectric members or the supporting member is provided with a protrusion configured to keep a distance between the facing portions of the dielectric members and the signal line.

A work vehicle includes an engine, a throttle opening degree setting unit, first and second hydraulic pumps driven by the engine, a travel hydraulic motor driven by hydraulic fluid discharged from the first hydraulic pump, a work implement driven by hydraulic fluid discharged from the second hydraulic pump. A first control unit is configured to determine a work phase of the work implement and to set an upper limit for the throttle opening degree in accordance with the work phase. A second control unit is configured to control output of the engine based on the smaller of the throttle opening degree set by the throttle opening degree setting unit and the throttle opening degree set by the first control unit.

A magneto-resistive effect (MR) element includes: first and second magnetic layers in which a relative angle formed by magnetization directions changes according to an external magnetic field; and a spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes a main spacer layer composed of gallium oxide as a primary component and containing at least one metal element selected from a group of magnesium, zinc, indium and aluminum.

Provided is a method for manufacturing an SOI wafer, which is capable of: efficiently removing an ion-implanted defect layer existing in an ion implanted layer in the vicinity of a peeled surface peeled by an ion implantation peeling method; ensuring the in-plane uniformity of a substrate; and also achieving cost reduction and higher throughput. The method for manufacturing an SOI wafer includes at least the steps of: bonding a silicon wafer with or without an oxide film onto a handle wafer to prepare a bonded substrate, wherein the silicon wafer has an ion implanted layer formed by implanting hydrogen ions and/or rare gas ions into the silicon wafer; peeling the silicon wafer along the ion implanted layer, thereby transferring the silicon wafer onto the handle wafer to produce a post-peeling SOI wafer; immersing the post-peeling SOI wafer in an aqueous ammonia-hydrogen peroxide solution; and performing a heat treatment at a temperature of 900° C. or higher on the immersed post-peeling SOI wafer, and/or polishing a silicon film layer of the immersed post-peeling SOI wafer, through CMP polishing by 10 to 50 nm.

A switching device is discloses that exhibits two stable resistance values to a voltage applied between electrodes. The switching device comprises thin films of a first electrode layer, an organic bistable material layer and a second electrode layer sequentially formed on a substrate, and the organic bistable material is a specified quinone compound.