The invention relates to the technical field of optical detection, in particular to
semiconductor detection equipment, which comprises a reinspection
light source for emitting reinspection light, a bright field
light source for emitting bright field light and a dark field
light source for emitting dark field light, the reinspection light, the bright field light and the dark field light are respectively guided to irradiate the surface of a
wafer, the reinspection light is reflected by the
wafer to form reinspection
signal light, and the reinspection
signal light is transmitted to the light source. The bright-field light is reflected by the
wafer to form bright-field
signal light, and the dark-field light source is scattered by the wafer to form dark-field
signal light; the optical separation element is used for collecting the bright-field
signal light, the dark-field
signal light and the reinspection signal light and performing spatial separation, so that the dark-field signal light, the bright-field signal light and the reinspection signal light are emitted to different transmission paths for respective imaging; wherein a dark field illumination
light spot formed by the dark field light on the surface of the wafer, a bright field illumination
light spot formed by the bright field light on the surface of the wafer and a reinspection illumination
light spot formed by the reinspection light on the surface of the wafer do not coincide with one another. The wafer defect detection device is at least beneficial to improving the detection speed and the detection precision of wafer defect detection.