40 results about "Multi photon excitation" patented technology

Provided is a SiC substrate which is not susceptible to cracking or cracking during processing such as grinding or polishing, and which can be manufactured at a high yield. The SiC substrate is provided with a biaxially oriented SiC layer, and a multiphoton excited photoluminescence image is acquired for each region in the surface of the biaxially oriented SiC layer, the regions being divided into a lattice of 440 [mu] m square except for an outer peripheral region within 2 mm from the outer edge of the SiC substrate. The proportion P1 of the number of images including the abnormal light emission regions in the total number of the multiphoton excited photoluminescence images is 40% or less.