The invention relates to an SIMS measuring method for oxygen isotopes in semiconductor or conductor nuclear materials. The method comprises the following steps: step a, treating a sample, preparing a measuring sample, carrying out sample filling, cleaning experimental equipment, setting measurement parameters and debugging an SIMS mass spectrometer; step b, loading the sample, measuring the sample and respectively recording the counting rates of 18O and 16O; step c, calculating the ratio of 18O to 16O according measuring results obtained in the step a12; step d, carrying out correction and uncertainty calculation on a measured value; and step e, finishing measurement. The SIMS measuring method for oxygen isotopes in deeply oxidized metallic uranium is established through research on optimization of solution and measurement conditions of oxygen in the environment, etc. The method has the characteristics of simple sample preparation, accurate measurement, high measurement precision, a fast measurement speed, etc.