2results about How to "Eliminate phenomenon" patented technology

The application relates to the technical field of ion thermal electric conversion, and discloses an ion thermal electric device with continuous power generation characteristics and a preparation method thereof, which comprises the following steps: taking a polymer matrix and an ionic liquid according to a mass ratio, dissolving the polymer matrix and the ionic liquid in an organic solvent, heating and stirring until the polymer matrix and the ionic liquid are dissolved, and forming a clear solution; taking iron chloride and ferrous chloride according to a molar ratio, dissolving the iron chloride and the ferrous chloride in deionized water to prepare a redox inorganic salt solution; adding the redox inorganic salt solution into the clear solution, and stirring and mixing the solution under temperature control; pouring the mixed solution into a mold, vacuum drying the mixed solution into a film, and adhering the film to an electrode after cutting. The ion thermal electric device prepared based on the method transfers electric charges by relying on Faraday redox reactions of iron ions and ferrous ions at an electrode interface during work. The application breaks the polarization and flow interruption limitation of a traditional double electric layer capacitor mechanism, realizes long-term and stable continuous chemical power generation of the device, and meets the sustainable power supply demand of microelectronic sensing equipment and the like.

The invention provides a self-adaptive reconfigurable high dynamic range infrared detector and a control method thereof. The detector comprises a first electrode, an N-type InP layer and an intrinsic InGaAs layer, an annular P-type InP region is arranged on the outer side of the side wall of the intrinsic InGaAs layer, an oxide layer is arranged on the surface of the other side of the intrinsic InGaAs layer, and a transparent electrode is arranged on the oxide layer; and a second electrode is arranged on the P-type InP region. By applying voltage to the transparent electrode, the energy band structure and the carrier transport characteristic of the InGaAs surface can be regulated and controlled: zero bias or positive bias voltage is applied under weak light, and high sensitivity is maintained; negative bias voltage is applied under strong light, a high-concentration hole high-conductivity channel is formed on the surface of the InGaAs in an induction mode, hole collection is accelerated, and charge accumulation and an electric field shielding effect are eliminated. Therefore, linear response in a wide dynamic range is realized under the condition that external attenuation devices are not added.