The invention discloses a
semiconductor structure and a forming method thereof. The structure comprises a printed circuit substrate; the packaging structure is in bonding connection with the printed circuit substrate and comprises a substrate, and a plurality of conductive plugs are arranged in the substrate; the
thermal expansion coefficient of the material of the filling layer is greater than that of the material of the substrate; the top
redistribution layer and the bottom
redistribution layer are located on the substrate; and the
chip structure is in bonding connection with the top rewiring layer. By introducing the filling layer with a larger
thermal expansion coefficient into the substrate, the problem of huge
shear stress accumulation caused by
thermal expansion coefficient mismatch between the
silicon-based material and the printed circuit substrate is relieved, and the reliability of the packaging structure is improved. After a traditional packaging substrate layer is cancelled, a
signal transmission path is greatly shortened, the interface parasitic effect and high-frequency
signal loss are further reduced, meanwhile, the simplified framework reduces dependence on a high-density organic substrate, the material cost and the
process complexity are reduced, and smooth transition from a
chip to
system-level connection is achieved.