Integrated circuit which features the following: a
storage cell (20A) with a first well
doping configuration comprising a first well region (114A-1), a second well region (112A), and a third well region (114A-2) arranged in a substrate (110), wherein the second well region (112A) is located between the first well region (114A-1) and the third well region (114A-2), and wherein the first well region (114A-1) and the third well region (114A-2) are further doped with a
dopant of a first type, and the second well region (112A) is doped with a
dopant of a second type; and a trough belt
cell (50) which is arranged adjacent to the
storage cell (20A), wherein: - the trough belt
cell (50) has a first trough belt area (50B), a second trough belt area (50A) and a third trough belt area (50C), wherein the second trough belt area (50A) is arranged between the first trough belt area (50B) and the third trough belt area (50C), - the first trough belt area (50B) and the third trough belt area (50C) have the first trough
doping configuration, - the second trough
band area (50A) has a second trough
doping configuration which includes a fourth trough region (114C) doped with the
dopant of the first type, and - the tub band
cell (50) contains first tub
pickup regions (160B) which are arranged on the fourth tub region (114C) and second tub
pickup regions (160A) which are arranged on a fifth tub region (112C) which extends without interruption into the second tub region (112A).