36 results about "Cell phase" patented technology

In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

In a method of controlling resistance drift in a memory cell of a resistance-changeable material memory device, the resistance changeable material in the memory cell is treated so that a drift parameter for the memory cell is less than about 0.18, wherein a change in resistance of a memory cell over the time period is determined according to the relationship:Rdrift=Rinitial×tα;where Rdrift represents a final resistance of the memory cell following the time period, Rinitial represents the initial resistance of the memory cell following the programming operation, t represents the time period; and α represents the drift parameter.

A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

Phase-change memory cells for storing information in a plurality of programmable cell states. A phase-change component is located between first and second electrodes for applying a read voltage to the phase-change component to read the programmed cell state. The component includes opposed layers of phase-change material extending between the electrodes. A core component extends between the electrodes in contact with respective inner surfaces of the opposed layers. An outer component extends between the electrodes in contact with respective outer surfaces of the opposed layers. At least one of the core and outer component is formed of electrically-conductive material and is arranged to present, to a cell current produced by the read voltage, a lower-resistance current path than the amorphous phase of the phase-change material in any of said cell states. The current path has a length dependent on size of the amorphous phase in the opposed layers.

The invention discloses a full-automatic pre-color-register method. The full-automatic pre-color-register method comprises the following steps that color cell phases are preset, and a photoelectric eye is additionally arranged on a first color cell; a printing machine is started; all the color cells are positioned according to the preset phases; all the color cells are laminated; color codes of all the color cells are detected through photoelectric eyes on all the color cells, the condition that the color codes are not detected is processed till the color codes of all the color cells are detected; expect the first color cell, the code form longitudinal errors of the current color cells and the previous color cells are read by the photoelectric eyes on the rest of the color cells, and the condition that the longitudinal errors are not in the range of -5-5 mm is processed till the read longitudinal errors are in the range of -5-5 mm; and the longitudinal errors in the range of -5-5 mm are corrected, the longitudinal errors is corrected to be in the range of -2-2 mm, and the pre-color-register process is completed. By the adoption of the full-automatic pre-color-register method, the problem that manual operation is adopted for the pre-color-register in the printing process, and consequently the rejection rate is large is solved.

The invention provides a microscope apparatus, used for identifying the cell phases of a plurality of cells mounted on a stage, including an analysis / observation optical system used for acquiring an observed-image of the cells and a stimulus optical system used for applying an optical stimulus to prescribed cells. Using these optical systems, the cell phases of the cells mounted on the stage are identified, an optical stimulus is applied to the cells, and the state of the cells before and after applying the stimulus is observed.

The present invention provides high-performance permanent magnets. This permanent magnet possesses: Composition represented by following composition formula: RpFeqMrCutCo100-p-q-r-t (wherein, R is at least one element selected from rare earth elements, and M is selected from Zr, Ti and At least one element selected from Hf, p is a number satisfying 10.5≦p≦12.5 atomic%, q is a number satisfying 23≦q≦40 atomic%, r is a number satisfying 0.88≦r≦4.5 atomic%, t In order to satisfy the number of 4.5≦t≦10.7 atomic %); and the following metal structure, the metal structure has a cell phase, the cell phase has a Th2Zn17 type crystal phase; a cell wall phase, the cell wall phase divides the Th2Zn17 type crystal phase M-rich flake phase, the M-rich flake phase is formed perpendicular to the c-axis of the Th2Zn17 crystal phase, and the concentration of M element is higher than that of the cell phase; and Cu-rich flake phase, the Cu-rich flake phase is along The M-rich sheet phase is formed, and the Cu concentration is higher than that of the cellular phase.

The present invention provides high-performance permanent magnets. The permanent magnet has the composition formula: R p Fe q m r Cu t co 100‑p‑q‑r‑t Composition and metal structure represented, the metal structure contains Th 2 Zn 17 The unit cell phase of the type crystalline phase, and is set in a manner separated from the unit cell phase, has a ratio Th 2 Zn 17 A Cu-rich phase with a high Cu concentration in the crystalline phase. Th 2 Zn 17 The Fe concentration of the type crystal phase is not less than 30 atomic % and not more than 45 atomic %. The average length of the Cu-rich phase is not less than 30 nm and not more than 250 nm.

The invention discloses an independent double-cell phase conjugation device consisting of tapered fibers and a fused silica rod and a method. Laser, of which the initial polarization state is p polarization passes through a first polaroid, a first lambda / 2 wave plate and a second polaroid, wherein a path of laser, of which the polarization state is s polarization is reflected by the second polaroid and a third polaroid, passes through a first lambda / 4 wave plate and a first coupling lens, enters the tapered fiber and generates a stimulated Brillouin scattering laser, while the laser of p polarization passes through the second polaroid to be continuously transmitted forward and enters the fused silica rod to serve as a pump source; the stimulated Brillouin scattering laser reflected by thetapered fiber enters the fused silica rod to serve as a seed source which interacts with a pump light before being amplified; and the amplified seed light is reflected and spatially superposed with the original incident laser. The device and the method have the advantages of greatly improving the quality of the output beam of the laser, reducing the spatial divergence angle of the emergent laser and compensating for the thermal distortion effect in the laser under operation of high power and high repetition rate.

A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer disposed between the lower substrate and the upper substrate, a color conversion layer disposed on the liquid crystal layer, a first polarizing layer and a first phase difference layer disposed between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer disposed between a light source and the lower substrate, wherein the first phase difference layer has a refractive index satisfying Inequality 1 and the second phase difference layer has refractive indexes satisfying Inequality 2.nx1≥ny1≥nz1  [Inequality 1]nx2>nz2>ny2  [Inequality 2]In Inequalities 1 and 2, nx1, nx2, ny1, ny2, nz1, and nz2 are the same in the detailed description.