36 results about "Cell phase" patented technology

In a memory device and in a method of programming the same, a memory device comprises: a plurality of memory cells, each memory cell comprising a resistance-changeable material that has an initial resistance that is determined in response to an applied programming current in a programming operation; and a modification circuit that modifies the resistance of the memory cell following a programming operation of the memory cell to vary the resistance of the memory cell from the initial resistance to a second resistance by applying a saturation current in a saturation operation. Each memory cell is connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation, that is used to apply the saturation current to the corresponding memory cell in the saturation operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a subsequent read operation.

A memory device comprises a plurality of memory cells, each memory cell comprising a memory cell material that has an initial resistance that is determined in response to an applied programming current in a programming operation, the resistance of the memory cell varying from the initial resistance over a time period following the programming operation, and each memory cell being connected to a conduction line of the memory device that is used to apply the programming current to program the resistance of the corresponding memory cell in the programming operation and that is used to apply a read current to read the resistance of the corresponding memory cell in a read operation. A modification circuit modifies the resistance of a memory cell of the plurality of memory cells selected for a read operation to return its resistance to near the initial resistance prior to a read operation of the memory cell.

The present invention provides high-performance permanent magnets. The permanent magnet has the composition formula: R p Fe q m r Cu t co 100‑p‑q‑r‑t Composition and metal structure represented, the metal structure contains Th 2 Zn 17 The unit cell phase of the type crystalline phase, and is set in a manner separated from the unit cell phase, has a ratio Th 2 Zn 17 A Cu-rich phase with a high Cu concentration in the crystalline phase. Th 2 Zn 17 The Fe concentration of the type crystal phase is not less than 30 atomic % and not more than 45 atomic %. The average length of the Cu-rich phase is not less than 30 nm and not more than 250 nm.

The invention discloses an independent double-cell phase conjugation device consisting of tapered fibers and a fused silica rod and a method. Laser, of which the initial polarization state is p polarization passes through a first polaroid, a first lambda / 2 wave plate and a second polaroid, wherein a path of laser, of which the polarization state is s polarization is reflected by the second polaroid and a third polaroid, passes through a first lambda / 4 wave plate and a first coupling lens, enters the tapered fiber and generates a stimulated Brillouin scattering laser, while the laser of p polarization passes through the second polaroid to be continuously transmitted forward and enters the fused silica rod to serve as a pump source; the stimulated Brillouin scattering laser reflected by thetapered fiber enters the fused silica rod to serve as a seed source which interacts with a pump light before being amplified; and the amplified seed light is reflected and spatially superposed with the original incident laser. The device and the method have the advantages of greatly improving the quality of the output beam of the laser, reducing the spatial divergence angle of the emergent laser and compensating for the thermal distortion effect in the laser under operation of high power and high repetition rate.