4results about How to "Reduce squib" patented technology

The utility model discloses a device for reducing tail heating surface ash on a flue type waste heat boiler in the copper smelting industry and belongs to the technical field of copper smelting waste heat recovery. The utility model relates to a plurality of groups of slag solidification flat steel, which is characterized in that each group of slag solidification flat steel comprises two pieces of slag solidification flat steel and is arranged on a first pipe on the smoke facing side of each group of coiled pipe rows of a slag solidification pipe panel or each convection bank; and the two pieces of slag solidification flat steel in each group form an included angle of 45 degrees with the flue gas direction and form an included angle of 90 degrees with each other. The waste heat boiler can effectively relieve and reduce the occurrence frequency of related problems, the service life of the waste heat boiler is prolonged, and the continuous and stable production time is prolonged.

A system for preventing water carryover in steam sootblowers during prolonged operation. Currently, steam sootblowers are only drained once before commissioning, and cannot be drained during operation, which is the root cause of water carryover in the steam during long-term operation. This invention comprises a main sootblowing gas source pipe, which is divided into an auxiliary sootblowing gas source pipe and branch sootblowing gas source pipes. The auxiliary sootblowing gas source pipe is connected to the air preheater. The branch sootblowing gas source pipes are respectively connected to the sootblower inlet pipes in the left, front, right, and rear wall areas of the boiler body. A bypass pipe is fixedly installed at the lowest point of each sootblower inlet pipe, and a bypass manual valve and a bypass solenoid valve are installed on the bypass pipe. This invention is used for draining water from steam sootblowers.

The invention relates to the field of soil remediation, and aims to provide a multifunctional high-pressure injection system for in-situ remediation, which comprises a medicament storage tank, a branch joint, a main pump, a pipeline unit and a control unit, the branch joint is provided with a medicament input port, a circulating port and an injection port; the main pump is communicated between the medicament storage tank and the medicament input port, and an adjusting unit is arranged on the main pump; the pipeline unit comprises a circulating channel, an injection channel and a bypass backflow channel; the near end of the circulating channel is communicated with the circulating interface, and the far end is communicated with the medicament storage tank; the near end of the injection channel is communicated with the injection interface; a bypass interface is formed in the injection channel, and a monitoring unit is mounted at the far end of the injection channel; the near end of the bypass backflow channel is communicated with the bypass connector, and the far end of the bypass backflow channel is communicated with the medicament storage tank. According to the in-situ remediation device, circulating homogenization, stable conveying, back pressure monitoring and bypass backflow can be carried out on the medicament, so that the stability, safety and remediation quality of in-situ remediation operation are improved.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.