The invention discloses a body structure GaAs
photoconductive switch based on a
graphene interface layer and a preparation process of the body structure GaAs
photoconductive switch. A
cathode contactelectrode is arranged on the lower surface of a GaAs substrate, an
anode contact electrode is arranged on the upper surface of the GaAs substrate, a
graphene layer is arranged between the
anode contact electrode and the GaAs substrate, the external
electrode is arranged on the upper surface of the
anode contact electrode, a light receiving hole penetrates through the external
electrode and the anode contact
electrode, the upper surface of the GaAs substrate is further covered with a
passivation layer, and the anode contact electrode sequentially comprises a Ni layer, a Ge layer, an Au layer, aNi layer and an Au layer from bottom to top. At present, most photoconductive switches are manufactured according to the principle of forming
ohmic contact around
gallium arsenide and multi-layer
metal. However, a switching device faces the phenomena of short service life, uneven heat dissipation, easy
burnout and the like, high-quality
graphene is transferred to a target substrate, and then thesurface of the target substrate is plated with
metal to form a
gallium arsenide-graphene-
metal composite structure, which plays a great role in heat dissipation and service life of the device.