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32results about How to "Raise the minimum" patented technology

Super-junction device and manufacturing method therefor

The invention discloses a super-junction device. A charge flowing region comprises a super-junction structure consisting of a plurality of alternately arranged N-type columns and P-type columns; the N-type columns have two or more widths; backward voltages required for completely exhausting the N-type columns with different widths are different, so that backward voltages corresponding to capacitance minimum values of super-junction units consisting of the N-type columns with different widths are different; and the number of the widths of the N-type columns is set to be two or more, so that the backward voltages corresponding to the capacitance minimum values of the super-junction units are mutually staggered, the super-junction units with the capacitance values greater than the capacitance minimum values always exist under any backward voltage, and the integral capacitance minimum value of the super-junction structure of the charge flowing region is increased and greater than the superposition of the capacitance minimum values of the super-junction units. The invention furthermore discloses a manufacturing method for the super-junction device. According to the super-junction device and the manufacturing method, the capacitance minimum value of the super-junction structure can be increased, the strong voltage change in a switch can be reduced, electromagnetic interference performances of a circuit and a system can be improved, so that the device is easy to use.
Owner:SHENZHEN SANRISE TECH CO LTD

Super junction device and manufacturing method thereof

The present invention discloses a super junction device. P-type columns of at least one super junction unit are internally provided with N-type electric field barrier layers, and the N-type electric field barrier layers are configured to segment the P-type columns into first and second P-type columns which are respectively located at the top portions and the bottom portions of the electric field barrier layers; the N-type electric field barrier layers are configured to realize segmentation exhaustion of super junction structures at a top portion and a bottom portion; when a source-drain voltage of a super junction device is smaller than or equal to a first voltage value, the super junction structure at the top portion is only exhausted; and when the source-drain voltage of the super junction device is larger than the first voltage value, the super junction structures at the top portion and the bottom portion are exhausted. The present invention further discloses a manufacturing methodof a super junction device. According to the invention, a gate-drain capacitance and the minimum value of the gate-drain capacitance can be improved to effectively reduce the electromagnetic interference performance of the device in an application circuit and effectively reduce current and voltage overshoot caused by the device in the application circuit, reversely recovered soft factors of the device can be increased, and a breakdown voltage of the device can be maintained.
Owner:SHENZHEN SANRISE TECH CO LTD

High-power gain optical fiber capable of simultaneously inhibiting mode instability and nonlinear effect and design method

The invention discloses a high-power gain optical fiber capable of simultaneously inhibiting mode instability and a nonlinear effect. The optical fiber is a double-cladding layer and sequentially comprises a fiber core and an inner cladding layer from inside to outside, the fiber core is doped with ytterbium or other rare earth ions to serve as a gain medium, the inner cladding layer is a quartz cladding layer, and the diameter value of the fiber core is 15-100 microns; the numerical aperture NA of the fiber core ranges from 0.01 to 0.1; the cross section of the inner cladding is a regular octagon; the value of the diameter of the inner cladding is 300-1200 microns; the cladding pumping absorption coefficient@915 nm is 0.2 to 1.0 dB/m; the optical fiber is bent and coiled, and the bendingradius is between 2.5 cm and 80 cm. According to the invention, the parameters influencing the thresholds of the nonlinear effect and the mode instability effect in the optical fiber are substituted into the theoretical model for calculation; in combination with the existing process level and experimental conditions, optical fiber parameters and bending radiuses capable of meeting the requirementsof a high-power optical fiber laser and inhibiting gains of a nonlinear effect and a mode instability effect at the same time are selected, and the mode instability threshold and the nonlinear effectthreshold are changed at the same time, so that the maximum output power of the optical fiber is improved.
Owner:武汉光谷航天三江激光产业技术研究院有限公司

Design method for shape control structure of cable network with positive Gaussian curvature based on initial reference state

The invention discloses an active shape control structure for a cable network with a positive Gaussian curvature. During the active replacement work, a total strain epsilon a of a surface cable is equal to the sum of an initial strain epsilon 0 in an initial reference state and an active replacement strain epsilon d during the work, namely, epsilon a=epsilon 0+epsilon d. Because the active replacement work can be normally carried out in the shape control structure of the cable network within a certain allowable temperature difference range, the active replacement strain epsilon d comprises a stress-strain increment delta epsilon e and a temperature strain epsilon T, namely, epsilon d=delta epsilon e+epsilon T. As a result, during the active replacement work, a total stress-strain of the surface cable epsilon e=epsilon 0+delta epsilon e=epsilon 0+epsilon d-epsilon T. During the replacement between the reference condition and some operating condition, the active replacement strain of the surface cable epsilon d is a fixed value unrelated to the load, the specification and the elasticity modulus of the surface cable and the like. According to the invention, an optimization design method based on the initial reference condition is provided, and can rapidly optimize the initial pretension of an inhaul cable in the initial reference state, determine the specification of the inhaul cable and meet the performance requirement in the operating condition of the active replacement.
Owner:SOUTHEAST UNIV

Optimization design method for operation mode of electric-thermal-hydrogen comprehensive energy system

The invention provides an electric-thermal-hydrogen comprehensive energy system operation mode optimization design method, which comprises the following steps of: 1, acquiring electric-thermal-hydrogen isolated island direct current micro-grid information at the current moment, and 2, judging the redundant state of each energy storage unit; thirdly, the output in the first step and the output in the second step serve as input, the maximum value and the minimum value of the fan mode switching boundary are calculated, and the fan unit control mode at the t + 1 moment is judged; and 4, setting the operation mode and the optimal output of each unit of the system. According to the method, the operation mode design of the electric heating combined island micro-grid with renewable energy access in a strong uncertainty scene can be efficiently provided, the control mode and the corresponding switching condition of each unit in the system can be quickly and accurately judged, and the optimal output of each unit in the system is solved by optimizing the objective function; the safe and stable operation of the system in a strong uncertainty scene is guaranteed, the operation cost of the system is reduced, and the economical efficiency and the energy utilization efficiency of electric-heat combined comprehensive energy are improved.
Owner:INST OF ELECTRICAL ENG CHINESE ACAD OF SCI +1

Power factor correction circuit and correction method thereof

The invention provides a power factor correction circuit, which comprises a THD correction circuit, the THD correction circuit comprises a compensation voltage source generation circuit and a compensation current limiting circuit, and the first input end of the THD correction circuit is used for accessing a first input signal; and the second input end of the THD correction circuit is used for being connected with the output end of a peak current detection unit of the power factor correction circuit, and the output end of the THD correction circuit is used for being connected with a logic circuit of the power factor correction circuit. The compensation voltage source generation circuit is used for generating a negative compensation voltage source and providing the negative compensation voltage source for the compensation current limiting circuit, and the compensation current limiting circuit is used for limiting the magnitude of compensation current. According to the invention, the minimum value of the inductive current of the power factor correction circuit is increased through the compensation current, the distortion influence of the negative current on the input current in the power factor correction circuit is reduced, and the THD value of the power factor correction circuit can be obviously reduced.
Owner:MORNSUN GUANGZHOU SCI & TECH

Superjunction device and method of manufacturing the same

The present invention discloses a super junction device. P-type columns of at least one super junction unit are internally provided with N-type electric field barrier layers, and the N-type electric field barrier layers are configured to segment the P-type columns into first and second P-type columns which are respectively located at the top portions and the bottom portions of the electric field barrier layers; the N-type electric field barrier layers are configured to realize segmentation exhaustion of super junction structures at a top portion and a bottom portion; when a source-drain voltage of a super junction device is smaller than or equal to a first voltage value, the super junction structure at the top portion is only exhausted; and when the source-drain voltage of the super junction device is larger than the first voltage value, the super junction structures at the top portion and the bottom portion are exhausted. The present invention further discloses a manufacturing methodof a super junction device. According to the invention, a gate-drain capacitance and the minimum value of the gate-drain capacitance can be improved to effectively reduce the electromagnetic interference performance of the device in an application circuit and effectively reduce current and voltage overshoot caused by the device in the application circuit, reversely recovered soft factors of the device can be increased, and a breakdown voltage of the device can be maintained.
Owner:SHENZHEN SANRISE TECH CO LTD

Design method for shape control structure of cable network with positive Gaussian curvature based on initial reference state

The invention discloses an active shape control structure for a cable network with a positive Gaussian curvature. During the active replacement work, a total strain epsilon a of a surface cable is equal to the sum of an initial strain epsilon 0 in an initial reference state and an active replacement strain epsilon d during the work, namely, epsilon a=epsilon 0+epsilon d. Because the active replacement work can be normally carried out in the shape control structure of the cable network within a certain allowable temperature difference range, the active replacement strain epsilon d comprises a stress-strain increment delta epsilon e and a temperature strain epsilon T, namely, epsilon d=delta epsilon e+epsilon T. As a result, during the active replacement work, a total stress-strain of the surface cable epsilon e=epsilon 0+delta epsilon e=epsilon 0+epsilon d-epsilon T. During the replacement between the reference condition and some operating condition, the active replacement strain of the surface cable epsilon d is a fixed value unrelated to the load, the specification and the elasticity modulus of the surface cable and the like. According to the invention, an optimization design method based on the initial reference condition is provided, and can rapidly optimize the initial pretension of an inhaul cable in the initial reference state, determine the specification of the inhaul cable and meet the performance requirement in the operating condition of the active replacement.
Owner:SOUTHEAST UNIV
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