A method and apparatus for
processing substrate edges is disclosed that overcomes the limitations of conventional edge
processing methods and systems used in
semiconductor manufacturing. The edge
processing method and apparatus of this invention includes a
laser and
fiber-
optic system to direct
laser radiation onto a rotating substrate supported by a chuck. A
laser beam is transmitted into a bundle of optical fibers, and the fibers accurately and precisely direct the beam to remove or transform organic or inorganic films, film stacks, residues, or particles, in
atmosphere, from the top edge, top bevel, apex, bottom bevel, and bottom edge of the substrate in a
single process step. Reaction by-products are removed by means of an exhaust tube enveloping the
reaction site. This invention permits precise control of an edge exclusion width, resulting in an increase in the number of
usable die on a
wafer.
Wafer edge processing with this invention replaces existing methods that use large volumes of
purified water and hazardous chemicals including solvents, acids, alkalis, and proprietary strippers.