45 results about "Energy dose" patented technology

Systems and methods which implement an image reconstruction framework to incorporate complex motion of structure, such as complex deformation of an object or objects being imaged, in image reconstruction techniques are shown. For example, techniques are provided for tracking organ motion which uses raw time-stamped data provided by any of a number of imaging modalities and simultaneously reconstructs images and estimates deformations in anatomy. Operation according to embodiments reduces artifacts, increase the signal-to-noise ratio (SNR), and facilitates reduced image modality energy dosing to patients. The technology also facilitates the incorporation of physical properties of organ motion, such as the conservation of local tissue volume. This approach is accurate and robust against noise and irregular breathing for tracking organ motion.

A hand-held therapeutic laser apparatus with a special opto-mechanical construction, which enables changeability of a front collimating lens to create different effective laser apertures. A smaller effective aperture has a comparatively higher radiant flux density for treatment of a small area that requires a higher energy dose, while a larger effective aperture facilitates treatment of a large area at a relatively reduced radiant intensity.

Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.

Apparatus, systems, and methods are provided for the generation and control of energy delivery in a dosage to elicit a therapeutic response in diseased tissue. A balloon catheter can have electrodes attached to a power generator and controller such that the balloon and electrodes contact tissue during energy treatment. Energy selectively may be applied to tissue based on measured impedance to achieve gentle heating. Calibration of the apparatus and identification of attached accessories by computing the circuit impedance prior to energy dosage facilitate regulation of power delivery about a set point. Energy delivery can be controlled to achieve substantially uniform bulk tissue temperature distribution. Energy delivery may beneficially affect nerve activity.

Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.

A laser annealing method for annealing a stacked semiconductor structure having at least two stacked layers is disclosed. A laser beam is focused on a lower layer of the stacked layers. The laser beam is then scanned to anneal features in the lower layer. The laser beam is then focused on an upper layer of the stacked layers, and the laser beam is scanned to anneal features in the upper layer. The laser has a wavelength of less than one micrometer. The beam size, depth of focus, energy dosage, and scan speed of the laser beam are programmable. Features in the lower layer are offset from features in the upper layer such that these features do not overlap along a plane parallel to a path of the laser beam. Each of the stacked layers includes active devices, such as transistors. Also, the first and second layers may be annealed simultaneously.

A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of particles cause the crystalline material to be in an amorphous state. The method also includes introducing a plurality of dopant particles into a selected depth of the crystalline material in the amorphous state using an implantation tool. The amorphous state traps the dopant particles. The method includes subjecting the monitor wafer including the plurality of particles and dopant particles into thermal anneal process to activate the dopant. The sheet resistivity is measured. The method operates the implantation tool using one or more production wafers if the dose of the dopant particles in the monitor water is within a tolerance of a specification limit.

Provided is a method of forming a pattern for an integrated circuit. The method includes forming a first layer over a substrate, wherein the first layer's etch rate is sensitive to a radiation, such as an extreme ultraviolet (EUV) radiation or an electron beam (e-beam). The method further includes forming a resist layer over the first layer and exposing the resist layer to the radiation for patterning. During the exposure, various portions of the first layer change their etch rate in response to an energy dose of the radiation received therein. The method further includes developing the resist layer, etching the first layer, and etching the substrate to form a pattern. The radiation-sensitivity of the first layer serves to reduce critical dimension variance of the pattern.

The present invention relates to applying at least one ultra / mega sonic device and its reflection plate for forming standing wave in a metallization apparatus to achieve highly uniform metallic film deposition at a rate far greater than conventional film growth rate in electrolyte. In the present invention, the substrate is dynamically controlled so that the position of the substrate passing through the entire acoustic field with different power intensity in each motion cycle. This method guarantees each location of the substrate to receive the same amount of total sonic energy dose over the interval of the process time, and to accumulatively grow a uniform deposition thickness at a rapid rate.

A method and apparatus for making phase shift masks are provided wherein an anti-reflective coating used on an opaque pattern layer of the mask fully covers the opaque pattern layer and has not been etched in the etching process to form the phase shift mask. A two-exposure method to form the phase shift mask is used wherein a photoresist having a defined dose-to-clear level is coated on the surface of the mask and the lower surface of the mask is exposed to a blanket exposure in an energy amount less than the dose-to-clear level. The open areas of the upper surface of the mask to be etched are exposed to an energy dose in an amount less than the dose-to-clear level, with the sum of the amounts of the lower surface energy and upper surface energy being at least the dose-to-clear level. The method and apparatus minimizes and / or avoids etching of the anti-reflective coating.

Systems and methods which implement an image reconstruction framework to incorporate complex motion of structure, such as complex deformation of an object or objects being imaged, in image reconstruction techniques are shown. For example, techniques are provided for tracking organ motion which uses raw time-stamped data provided by any of a number of imaging modalities and simultaneously reconstructs images and estimates deformations in anatomy. Operation according to embodiments reduces artifacts, increase the signal-to-noise ratio (SNR), and facilitates reduced image modality energy dosing to patients. The technology also facilitates the incorporation of physical properties of organ motion, such as the conservation of local tissue volume. This approach is accurate and robust against noise and irregular breathing for tracking organ motion.

Described herein are embodiments of a method to control energy dose output from a laser-produced plasma extreme ultraviolet light system by adjusting timing of fired laser beam pulses. During stroboscopic firing, pulses are timed to lase droplets until a dose target of EUV has been achieved. Once accumulated EUV reaches the dose target, pulses are timed so as to not lase droplets during the remainder of the packet, and thereby prevent additional EUV light generation during those portions of the packet. In a continuous burst mode, pulses are timed to irradiate droplets until accumulated burst error meets or exceeds a threshold burst error. If accumulated burst error meets or exceeds the threshold burst error, a next pulse is timed to not irradiate a next droplet. Thus, the embodiments described herein manipulate pulse timing to obtain a constant desired dose target that can more precisely match downstream dosing requirements.

An aspect of the disclosure is directed to a method of forming an interconnect for use in an integrated circuit. The method comprises: forming an opening in a dielectric layer on a substrate; filling the opening with a metal such that an overburden outside of the opening is created; subjecting the metal to a microwave energy dose such that atoms from the overburden migrate to within the opening; and planarizing the metal to a top surface of the opening to remove the overburden, thereby forming the interconnect.

A lithography model uses a transfer function to map exposure energy dose to the thickness of remaining photoresist after development; while allowing the flexibility to account for other physical processes. In one approach, the model is generated by fitting empirical data. The model may be used in conjunction with an aerial image to obtain a three-dimensional profile of the remaining photoresist thickness after the development process. The lithography model is generally compact, yet capable of taking into account various physical processes associated with the photoresist exposure and / or development process for more accurate simulation.

The present invention relates to an apparatus for treating skin by means of intense pulsed light (IPL). Such apparatus may be used for the treatment of, for example, cosmetic purposes such as hair depilation or dermatological treatment of skin conditions such as acne or rosacea. The present invention provides an improved apparatus that can be used by a non-medical practitioner and comprises a light source comprising a light emitting element for transmitting light energy to the skin and a charge storage device for discharging an energy dose to the light emitting element. There is further provided at least one sensor for measuring a parameter of the skin and a control system configured to determine the treatment energy dose to be delivered. This treatment energy dose is de-rived using the sensor measurement and means of reduction in unwanted time delay associated with charging or discharging of the charge storage device in sole dependence on the current or most recently measured skin parameter.

Proton beams are a promising alternative to X-rays for therapeutic purposes because they may also destroy cancer cells, but with a greatly reduced damage to healthy tissue. The energy dose in tissue may be concentrated at the tumor site by configuring the beam to position the Bragg Peak proximate the tumor. The longitudinal range of a proton beam in tissue is generally dependent upon the energy of the beam. However, after switching energies, the proton-beam system requires some time for the beam energy to stabilize before it may be used for therapy. A proton linear accelerator system is provided for irradiating tissue with an improved beam energy control, configured to provide RF energy from a first RF energy source during the on-time of the proton beam operating cycle for changing the energy of the proton beam, and to provide RF energy from a second distinct RF energy source during the off-time of the proton beam operating cycle for increasing or maintaining the temperature of the cavity. Each RF source is operated independently, allowing higher RF pulse rates to reach the cavity, supporting a smaller time between proton beam energy pulses. In addition, the peak power requirements for the second RF energy source may, in general, be less than for the second RF energy source, allowing a less costly type to be used for the second source. The use of a first and second RF source may reduce the cavity settling time from minutes to less than 10 seconds.

A method for processing semiconductor wafers, e.g., silicon. The method includes providing a monitor wafer, which is made of a crystalline material. The method includes introducing a plurality of particles within a depth of the material, whereupon the plurality of particles cause the crystalline material to be in an amorphous state. The method also includes introducing a plurality of dopant particles into a selected depth of the crystalline material in the amorphous state using an implantation tool. The amorphous state traps the dopant particles. The method includes subjecting the monitor wafer including the plurality of particles and dopant particles into thermal anneal process to activate the dopant. The sheet resistivity is measured. The method operates the implantation tool using one or more production wafers if the dose of the dopant particles in the monitor water is within a tolerance of a specification limit.

A method used to yield irradiation product with minimal impurity for the solid target for gallium (Ga)-68 / germanium (Ge)-68 generator mainly consists of the procedures: first calculate the thickness d for the electroplated gallium (Ga)-69 on the solid target; and then through a graph of decay curves including 69Ga(p, 2n) 68Ge target thickness and incident energy with 5 different incident energy doses, derive the corresponding irradiation energy dose Yi for each group after decay; and through the graph including 69Ga(p,2n)68Ge incident energy and reaction cross-sectional area, derive the nuclear reaction cross-sectional area for each group for germanium(Ge)-68, gallium (Ga)-68, zinc (Zn)-65 and figure out the mean reaction area (MRA) from the reaction cross-sectional area of each group; and select the maximum germanium(Ge)-68 MRA value and the minimum gallium (Ga)-68 and zinc (Zn)-65 MRA values; and generate the required default irradiation energy for the MRA of each group.