125 results about "Fluoromethane" patented technology

The invention relates the multicomponent mixed working substance used for preparing dual-temperature by single-machine vapor compression refrigerator. The low temperature is between -60- -40Deg.C and the high temperature is between -25- 10Deg.C. The multicomponent mixed working substance comprises lower boiling working substance and high boiling working substance. The lower boiling working substance comprises tetrafluoromethane, ethylene, ethane, fluoroethylene, trifluoromethane, fluoromethane, hydrofluoeic ether, carbon dioxide, difluoromethane and penfluoroethane; the high boiling working substance comprises trifluoro-thane, hydrofluoeic ether, propylene, propane, perfluoropropylamine, propadiene, cyclopropane, difluo-monochloromethane, penta-monochloroethane, perfluoroethane, difluoroethane, isobutene, butane, butylenes, isobutylene, sevofluoropropane, hexafluoropropane, penfluoropropane and tetrachloromonofluoroethane.

This working medium for a heat cycle contains trifluoroethylene and a first component comprising at least one substance selected from carbon dioxide, fluoromethane, trifluoroiodomethane, methane, ethane, propane, helium, neon, argon, krypton, xenon, nitrogen, and ammonia.

A multi-element mixed refrigerant suitable for cryogenic regions of -130 to -180 DEG C comprises five groups of substances: 1) the combination of at least two of nitrogen, argon, neon or alkyl; 2) tetrafluoromethane and methane or the combination thereof; 3) trifluoromethane, ethane, ethylene and fluoromethane or the combination of at least two thereof; 4) perfluoropropane, difluoromethane, propane, propylene and hexafluoropropylene or or the combination of at least two thereof; 5) 1,1,1,2,2-perfluoropropane, 1,1,1,2,3,3,3-heptafluoropropane, perfluoro-n-butane, 1,1,2,2-tetrafluoropropane, 1,1,1,2,3,3-hexafluoropropane, 1,1,1,3,3-perfluoropropane, 1,1,1,2,2,3,3,4,4-nonafluorobutane, 1,1,1,2,2,3,3-sevofluorobutane, 1,1,1,2,2,4,4,4-perfluorobutane, 1,1,2,3-perfluoropropane, 1,1,2,2,3-perfluoropropane, 1,1,1,2,3,4,4,4-perfluorobutane and 1,1,1,2,2,3,3,4-perfluorobutane or the combination of at least two thereof. The multi-element mixed refrigerant can achieve refrigeration of -130 to -180 DEG C safely and efficiently, the greenhouse effect is low and no ozone layer is destroyed.

The invention provides a method for preparing fluoromethane. In the presence of a catalyst, CHxClyF (x is equal to 0, 1 and 2, and y is equal to 3, 2 and 1) and hydrogen are subjected to hydrodechlorination reaction so as to generate HFC-41, the catalyst is selected from a self-loaded type Ni catalyst, a loaded type Pd catalyst, a loaded type Pt catalyst, a loaded type Rh catalyst or a metal carbide catalyst, and the metal carbide catalyst is selected from Mo2C, WC or W2C. The method provided by the invention is simple in process route, safe in production and environmentally friendly.

The invention discloses separation equipment for HF (Hydrogen Fluoride) in a difluoromethane reaction gas. The equipment comprises an HF absorption tower, a falling film absorber, a water scrubber, an alkali scrubber and circulating pumps arranged on the water scrubber and the alkali scrubber. The invention further discloses a separation process for HF in the difluoromethane reaction gas. The separation process comprises the following steps: introducing the difluoromethane reaction gas which flows through a reflux tower into the HF absorption tower, feeding 98wt% concentrated sulfuric acid in an elevated tank through the tower top of the HF absorption tower, and feeding a mixed gas absorbed by the HF absorption tower into the falling film absorber; then feeding the mixed gas into the water scrubber, circulating until the hydrochloric acid concentration is about 32%, and collecting; and recycling concentrated sulfuric acid in a tower kettle of the HF absorption tower to an anhydrous hydrogen fluoride production device. The HF absorption tower for removing HF is simple in structure, operates at a normal temperature and pressure, and is low in energy consumption; concentrated sulfuric acid, which contains a certain amount of HF and is obtained by the HF absorption tower, is fed into the anhydrous hydrogen fluoride production device so as to be reused, so that wastes of raw materials are reduced; the hydrochloric acid obtained by the process is high in quality, the fluorine ion content is not more than 50ppm, and the environment pollution is reduced.

The invention relates to a cascade refrigeration system low-temperature mixed refrigerant which is applicable to the temperature area of 180-220K and contains N2O, and a preparation method thereof; the low-temperature mixed refrigerant comprises one or two components of low-boiling point refrigerant N2O(R744A), ethane (R170), fluoromethane (R23), hexafluoroethane (R116), fluoromethane (R41), and CO2 (R744) and is formed by physical mixing at normal temperature. The low-temperature mixed refrigerant damages no ozonosphere, has low greenhouse effect potential, meets the requirement of environmental protection, has suitable thermal parameters and excellent circulation performance, and can optimize and design the new refrigerant system by the existing cascade low-temperature compressor. The mixed refrigerant can be used for replacing the refrigerant in the existing cascade refrigeration low-temperature system.

The invention discloses an etching method used for a shoulder-style side wall of a logic component of an ultra large scale integrated circuit, adopting a plasma-drying etching method to remove most of silicon oxide and silicon nitride medium films to form a side wall. The method includes the following steps: step A, main etching of top silicon nitride: adjusting electrode power, cavity pressure and flow proportion of reaction gases to raise isotropy etching trends so as to acquire an inclined top shoulder form of the side wall; step B, over-etching of silicon nitride: regulating proportions of fluoromethane and oxygen to get a high selection ratio of 16:1 to 22:1 between silicon nitride and silicon oxide. The invention adopts the method of raising the gradient of the top shoulder of the side wall to solve the problem of holes in the following PMD settlement process caused by the continuous reduction of the space between polysilicon grids so as to enhance the reliability of the component.

Methyl chloride and hydrogen fluoride are reacted in a gas phase in the presence of a fluorination catalyst and the resulting mixture, containing fluoromethane and hydrogen chloride, is fed to a distillation column for separation and purification of the fluoromethane and hydrogen chloride as the overhead fraction. It is thus possible to efficiently produce high purity HFC-41 which is suitable for use as a semiconductor etching gas.

A method of etching a barrier layer in an integrated circuit (IC) wherein said barrier layer is composed of silicon nitride or silicon carbide. The method comprises receiving an etched IC structure having an exposed barrier layer. The method then proceeds to apply an etchant gas mixture comprising a nitrous oxide (N₂O) gas and a fluoromethane (CH₃F) gas. The etchant gas mixture provides a relatively high selectivity between the barrier layer to an adjacent dielectric layer.

A process for the preparation of a fluoroiodoalkane represented by the structural formula CF₃(CF₂)_n—I, wherein n is 0 or 1. The process has the step of reacting a source of iodine with a compound represented by the structural formula CF₃(CF₂)_n—Y, wherein Y is selected from H, Cl, Br and COOH and wherein n is 0 or 1. The reaction is carried out at a temperature from about 100° C. to about 750° C. and at a pressure from about 0.001 to about 100 atm for a contact time from about 0.001 second to about 300 hours in the presence a catalyst. The catalyst is subject to one or both of the following: (a) treating the catalyst prior to the reaction via contact with a gas selected from the group consisting of hydrogen fluoride, trifluoromethane, hydrogen, hydrogen iodide, iodine, fluorine, and oxygen, wherein the contact is carried out at a temperature and for a contact time sufficient to reduce the length of the induction period of the catalyst; and (b) treating the catalyst after the reaction via contact with a gas selected from the group consisting of hydrogen fluoride, hydrogen, fluorine, oxygen, or air at a temperature and for a contact time sufficient to regenerate the catalyst.

The invention relates to a fluorination catalyst for preparing difluoromethane or monochlorodifluoromethane, a preparation method and an application and belongs to the catalyst preparation technology. An antimonial chloride and a promoter are mixed to be the fluorination catalyst, wherein the promoter comprises metal sulfates and a carrier; the weight percentage of the antimonial chloride to the promoter is (50-70):(30-50); the weight percentage of the carrier to the metal sulfates is (80-90):(10-20); and the obtained fluorination catalyst is used for preparing the difluoromethane or monochlorodifluoromethane. The fluorination catalyst provided by the invention is low in preparation cost and is used for preparing the difluoromethane or monochlorodifluoromethane; the operation process is simple and the condition is mild; the purity of the difluoromethane or monochlorodifluoromethane reaches up to 99%; the corrosion to equipment is small; the service life is long; the service life of the reaction equipment of the difluoromethane is increased from 2-6 months to more than 6-18 months; and the service life of the reaction equipment of the monochlorodifluoromethane is increased from 12-18 months to more than 24-36 months.

The invention provides a composition comprising 1,1-difluoroethene (R-1132a), difluoromethane (R-32), 2,3,3,3-tetra-fluoropropene (R-1234yf), optionally carbon dioxide (CO2, R-744), and, optionally, 1,1,2-trifluoroethene (R-1123).

The invention relates to the field of intelligent manufacturing of electronic-grade gas, and particularly discloses a rectification control system and a rectification control method for preparing electronic-grade fluoromethane. The rectification control system comprises a premixer, a reactor, a separating tower, a water washing tower, an alkaline washing tower, a drying tower, a rectifying tower and a rectification control tower system, according to the rectifying tower control system, an intelligent control method based on the artificial intelligence technology is used for dynamically regulating and controlling the pressure and temperature of a rectifying tower so as to optimize the purification precision of electronic-grade fluoromethane from a control end.

The invention discloses a mixed working substance containing N2O in an auto-cascade circulatory system. The working substance consists of 15-50% of a first group substance by mass fraction and a second group substance in balancing amount, wherein, the first group substance is N2O or a compound formed by N2O and one or more of ethane, trifluoromethane, hexafluoroethane, fluoromethane, carbon dioxide and ethylene. Compared with the prior working substance used for the auto-cascade circulatory system, the mixed working substance provided by the invention has the following advantages: the mixed working substance provided by the invention can effectively realize the refrigeration of a temperature range of 200-240K; the ozone depletion potential (ODP) of N2O (R744A) equals to zero, and the global warming potential (GWP) thereof is relatively low; and as N2O is a natural substance which can be easily obtained, and other refrigerants matched with N2O are reasonably priced, the use of the mixed refrigerant can reduce the cost for companies.

The invention discloses a high efficient refrigerator refrigerant with a low global warming potential (GWP) value. The refrigerant comprises the following components in percentage by weight: 2 to 15% of 1,1,1,2-tetrafluoroethane (CF3CH2F, R134a), 0 to 80% of fluoroethane (C2H5F, R161), and 5 to 98% of dimethyl ether (C2H6O, DME). The ozone depression potential (ODP) of the mixed refrigerant is 0, the GWP value is less than 120, the environmental performance is excellent, moreover the unit-quality COP (coefficient of performance) of the refrigerant is better than that of R12 (dichlorodifluoromethane, namely freon); and at the same time, the unit-volume refrigerating capacity of the refrigerant is equivalent to R12, the slippage temperature is small, the evaporation and condensing pressures are approximate to those of R12, the refrigerant has the advantages of low displacement cost, energy saving, and environment-friendliness, and thus the refrigerant can be used to displace R12 in the long term.

The invention discloses a process for preparing difluoromethane by a gas phase method, and relates to the field of difluoromethane production processes. The process for preparing the difluoromethane by the gas phase method comprises seven process steps. After the technical scheme is adopted, the beneficial effects of the invention are as follows: the process is suitable for large-scale production;most of HCFC-31 is recovered by a heavy component recovery tower and then returns to the reaction system again to participate in the reaction, so that the unit consumption of dichloromethane is reduced, meanwhile, the HCFC-31 is prevented from being directly discharged into the atmosphere from the tower kettle of a rectifying tower, the problem of environmental pollution is solved, the safety ofthe device is improved, and the economic benefit is remarkable.

The invention provides a catalyst for preparing vinyl fluoride through gas phase removal of HF by virtue of 1,1-difluoroethane as well as a preparation method and application of the catalyst. The catalyst is prepared by the steps of preparing a precursor from a carrier and an active component, and carrying out roasting and trifluoromethane fluorination, wherein the carrier is activated carbon, andthe active component is metal chloride or metal nitrate. The prepared catalyst is applied to the preparation of vinyl fluoride by virtue of 1,1-difluoroethane, the anti-carbon performance of the catalyst is remarkably improved, and the service life of the catalyst is prolonged; and meanwhile, the selectivity of reaction for preparing vinyl fluoride from 1,1-difluoroethane at low temperature and the conversion rate of 1,1-difluoroethane(R152a) are relatively high.

The invention discloses an environment-friendly refrigeration composition. The environment-friendly refrigeration composition is prepared from, by molar percent, 50-70% of fluoromethane and 30-50% of a second component selected from one or two or three of trans-1,3,3,3-tetrafluoropropene, 2,3,3,3-tetrafluoropropene and f-methyl methyl ether; the boiling point of the refrigeration composition is -50--75 DEG C, and the GWP value is smaller than or equal to 300. The refrigeration composition is low in GWP value, excellent in refrigeration performance, low in flammability, high in safety and suitable for replacing HFC-23 for refrigeration.

The invention provides a ternary refrigeration composition and a refrigeration device comprising the same. The ternary refrigeration composition is composed of a first component and a second component, the first component is fluoroethane, and the second component is selected from any two of 1, 1-difluoroethane, difluoromethane and 2, 3, 3, 3-tetrafluoropropene. According to the present invention,the environmental protection property and the thermodynamic property of fluoroethane are similar to those of R290 while the combustibility of fluoroethane is lower than R290, and fluoroethane and thesecond component with the combustibility of class 2 or 2L are used together, so that the refrigeration composition can have characteristics of low GWP, good thermodynamic property and low combustibility grade, and the use safety is improved; the ternary refrigeration composition has an ODP value of zero, and does not cause damage to the ozone layer even after long-term use. Therefore, the ternaryrefrigeration composition has lower GWP, ODP is 0, the combustibility is 2 types, and the capacity and the energy efficiency of a unit are equivalent to those of a unit using an R290 refrigerant whenthe ternary refrigeration composition is applied.

The invention relates to a refrigerant for a cooling device, a test chamber for conditioning air, and a use of the refrigerant for conditioning air in a test space of the test chamber. The cooling device comprises a cooling circuit with at least one heat exchanger, the refrigerant undergoing a phase transition in the heat exchanger, the refrigerant being a refrigerant mixture composed of a mass fraction of carbon dioxide (CO2), a mass fraction of difluoromethane (CH2F2) and a mass fraction of at least one other component, wherein the mass fraction of carbon dioxide in the refrigerant mixture is 5 to 65 mass percent, the mass fraction of difluoromethane being up to 68 mass percent, the other component being trifluoroiodomethane (CF3I), fluoromethane (CH3F), ethane (C2H6), 1,1-difluoroethene(C2H2F2), ethene (C2H4), fluoroethene (C2H3F), ethyne (C2H2), propane (C3H8), propene (C3H6) and/or fluoroethane (CH2FCH3), the mass fraction being up to 55 mass percent.

The invention discloses a high efficient refrigerator mixed refrigerant with a low global warming potential (GWP) value. The refrigerant comprises the following components in percentage by weight: 2 to 15% of 1,1,1,3,3-pentafluoropropane (C3H3F5, R245fa), 0 to 20% of fluoroethane (C2H5F, R161), and 65 to 98% of dimethyl ether (C2H6O, DME). The ozone depression potential (ODP) of the refrigerant is 0, the GWP value is less than 120, the environmental performance is excellent, moreover, the refrigerating capacity of the refrigerant in unit quality or unit volume is equivalent to R12 (dichlorodifluoromethane, namely freon), the COP (coefficient of performance) of the refrigerant is slightly higher than that of R12; and at the same time, the evaporation and condensing pressures of the refrigerant is approximate to those of R12, so the refrigerant can be directly injected into the refrigerating system that uses R12 originally, and has the advantages of low replacement cost, energy saving, and environment-friendliness.

Provided is a method for producing fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride ((CF₃)₂CHCOF), which are useful as dry etching gases etc., safely and inexpensively with high purity.

According to the method in which 1,1,3,3,3-pentafluoro-2-trifluoromethylpropyl methyl ether is pyrolyzed in a gas phase in the presence of a catalyst, the desired fluoromethane and 3,3,3-trifluoro-2-(trifluoromethyl)propanoyl fluoride can be obtained with high selectivity and high conversion of the starting material by a simple process in which a pyrolysis reaction is performed in a gas phase using the inexpensive starting material.