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2results about How to "Low protection level" patented technology

Intelligent high-protection low-voltage control box

This application relates to the field of power equipment technology, specifically to an intelligent high-protection low-voltage control box, including a box body, an outer door panel, and an inner door panel. The box body has a door frame, the inner door panel is hinged to the inner side of the door frame, and the outer door panel is hinged to the outer side of the door frame. The outer door panel is provided with a door lock assembly to lock the outer door panel to the door frame. The inner side of the outer door panel has at least one ring of foam strip corresponding to the door frame for sealing the outer door panel and the box body. The door lock assembly passes through the outer door panel, and a sealing structure is provided between the two. The box body contains an intelligent monitoring and protection module for protecting and controlling power equipment. The box body is provided with a connector assembly for connecting and disconnecting cables. This application solves the problems of low protection level and poor sealing performance of existing intelligent low-voltage control boxes.
Owner:SHENZHEN LANHOPE ELECTRONICS

A high protection level unidirectional thyristor electrostatic protection device and its manufacturing method

The invention discloses a high-protection-level unidirectional thyristor electrostatic protection device, comprising a P-type substrate; a first N-type deep well and a second N-type deep well are arranged in the substrate; a P-well is arranged on the right side of the second N-type deep well; a first P+ injection area and a first N+ injection area are arranged in the first N-type deep well; a second P+ injection area and a second N+ injection area are arranged in the second N-type deep well; a fourth N+ injection area connected across is arranged between the first N-type deep well and the second N-type deep well; a third P+ injection area and a third N+ injection area are arranged in the P-well; the first P+ injection area, the first N+ injection area, the second P+ injection area and the second N+ injection area are connected together and serve as the anode of the device, and the third P+ injection area and the third N+ injection area are connected together and serve as the cathode of the device.
Owner:SUPERESD MICROELECTRONICS TECH CO LTD