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52results about How to "Optimizing light path" patented technology

Wearable intelligent device, interaction method of wearable intelligent device and wearable intelligent device system

The invention relates to a wearable intelligent device, an interaction method of the wearable intelligent device and a wearable intelligent device system. The wearable intelligent device comprises a device frame, a micro projector, a spectroscope, an image sensing unit, a retina position sensing unit, and a central data center, wherein the micro projector is suitable for projecting a graphic interface to the spectroscope; the spectroscope is suitable for receiving the projected graphic interface and forming a real image of the graphic interface in human eyes; the image sensing unit is suitable for sensing external scene information, and converting the external scene information into scene image data; the retina position sensing unit is suitable for sensing positions of the eyes and a changing mode of the positions along with time, and converting the positions into position data; the central data center is at least suitable for converting the changing mode of the positions along with time and the position data into corresponding operation instructions; the central data center further comprises a sharing module; and the sharing module is at least suitable for receiving the operation instructions, and executing an operation of sharing the scene image data to a third-party wearable intelligent device. According to the wearable intelligent device disclosed by the invention, rapid sharing of data is achieved, and user experience is improved.
Owner:SEMICON MFG INT (SHANGHAI) CORP

Photovoltaic device

A large surface area photovoltaic device having high conversion efficiency and excellent mass productivity is provided. A photovoltaic device 100 having a photovoltaic layer 3 comprising a crystalline silicon layer formed on a substrate 1, wherein the crystalline silicon layer has a crystalline silicon i-layer 42, and the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio, which represents the ratio of the Raman peak intensity for the crystalline silicon phase relative to the Raman peak intensity for the amorphous silicon phase, that is not less than 4 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 15%. Also, a photovoltaic device 100 in which the size of the surface of the substrate 1 on which the photovoltaic layer 3 is formed is at least 1 m square, and in which the crystalline silicon i-layer 42 has a substrate in-plane distribution represented by an average value for the Raman peak ratio that is not less than 5 and not more than 8, a standard deviation for the Raman peak ratio that is not less than 1 and not more than 3, and a proportion of regions in which the Raman peak ratio is not more than 4 of not less than 0% and not more than 10%.
Owner:MITSUBISHI HEAVY IND LTD
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