The invention relates to a method for stimulating quick growth of centipedegrass by preprocessing stolons through low-temperature plasmas. The method includes the following steps that 1, the centipedegrass stolons are soaked in
clean water at the temperature of 30-35 DEG C for 18 hours; 2, the
dielectric barrier
helium low-temperature plasmas are used for
processing the stolons under the
processing conditions that the
processing intensity is 150-450 W, the processing time is 10-20 s, the polar plate spacing is 2 cm, the pressure intensity is 150 Pa, and the frequency is 13.56 kHz; 3, the processed stolons are soaked in
clean water at the temperature of 30 DEG C for 18-24 hours; 4, the soaked stolons are planted in flowerpots to be cultivated. By processing the centipedegrass stolons with the low-temperature plasmas, the
dry weight of underground parts, the
root shoot ratio, the total
root length, the
root volume, the root specific surface area and the average root
diameter of the centipedegrass stolons can be increased by 12-41%, 8-20%, 18-33%, 30-62%, 33-64%, 20-61%, 7-22% and 21-36% respectively. The new method is easy and convenient to operate, low in cost and free of
pollution,takes effect quickly, can effectively promote the growth of the underground parts and overground parts of the centipedegrass stolons.